Ka-band power PHEMT on-wafer characterization using prematched structures

IEEE MTT-S International Microwave Symposium Digest

Volumn 3, Issue , 1993, Pages 1343-1346

  Sharma, A K ^a   Dow, G S ^a   Aust, M ^a   Canyon, J ^a   Allen, B ^a   Pak, S ^a   Yang, D ^a   Hwang, Y ^a   Tan, K ^a  

^a Electronics Technology Div ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; HIGH ELECTRON MOBILITY TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; SEMICONDUCTING INDIUM COMPOUNDS; WSI CIRCUITS;

HYBRID AMPLIFIER CIRCUIT; KA-BAND POWER AMPLIFIERS; MONOLITHIC INTEGRATED CIRCUIT AMPLIFIER; PREMATCHED STRUCTURES; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTORS;

POWER AMPLIFIERS;

EID: 0027262861     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)