A heterojunction minority carrier barrier for InSb devices

Semiconductor Science and Technology

Volumn 8, Issue 1S, 1993, Pages

  Ashley, T ^a   Dean, A B ^a   Elliott, C T ^a   Johnson, A D ^a   Pryce, G J ^a   White, A M ^a   Whitehouse, C R ^a  

^a DEFENCE SCIENCE AND TECHNOLOGY LABORATORY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DOPING (ADDITIVES); ELECTRIC CURRENT MEASUREMENT; MOLECULAR BEAM EPITAXY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING ANTIMONY COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

CONDUCTION BAND BARRIER; HETEROJUNCTION MINORITY CARRIER BARRIER; HETEROSTRUCTURES; OPTIMUM BARIER COMPOSITION; SATURATION LEAKAGE CURRENT; STRAIN RELIEF CRITICAL THICKNESS;

HETEROJUNCTIONS;

EID: 0027233177     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/8/1S/086     Document Type: Article

References (11)

1. Nonequilibrium devices for infra-red detection