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Physical Review Letters

Volumn 70, Issue 3, 1993, Pages 323-326

Origin of the Stokes shift: A geometrical model of exciton spectra in 2D semiconductors

(4) Yang, Fang a Wilkinson, M a Austin, E J a O'Donnell, K P a

a UNIVERSITY OF STRATHCLYDE (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION SPECTROSCOPY; CORRELATION METHODS; ELECTRON ENERGY LEVELS; EMISSION SPECTROSCOPY; EXCITONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; RANDOM PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

BAND GAP; GEOMETRICAL MODEL; INTERFACE FLUCTUATIONS; STOKES SHIFT; TOPOGRAPHICAL MODEL; TWO DIMENSIONAL SEMICONDUCTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0027210313 PISSN: 00319007 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevLett.70.323 Document Type: Article

Times cited : (197)

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