Long-wavelength quantum-well infrared detectors based on intersubband transitions in InGaAs/InP quantum wells

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1762, Issue , 1993, Pages 216-226

  Andersson, Jan Y ^a   Lundqvist, Lennart ^a   Paska, Z F ^a   Streubel, K ^a   Wallin, Johan ^a  

^a SWEDISH INSTITUTE OF COMPUTER SCIENCE   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; DIFFRACTION GRATINGS; ELECTRONIC PROPERTIES; FABRICATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

CARRIER IMPACT EXCITATION; GRATING COUPLING; HIGH CURRENT RESPONSITIVITY; LONG-WAVELENGTH QUANTUM-WELL INFRARED DETECTORS; POLISHED EDGE DETECTOR;

INFRARED DETECTORS;

EID: 0027188092     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (14)