Two-dimensional contact-type image sensor using amorphous silicon photo-transistor

Japanese Journal of Applied Physics

Volumn 32, Issue 1 S, 1993, Pages 458-461

  Yamaguchi, Muneaki ^a   Kaneko, Yoshiyuki ^a   Tsutsui, Ken ^a  

^a HITACHI LTD   (Japan)

Author keywords

Amorphous silicon; Charge storage mode; Contact type image sensors; Large area sensors; Photo transistors; Split gate electrodes; Thin film transistors; Two dimensional image sensors

Indexed keywords

AMORPHOUS MATERIALS; CONTACT SENSORS; DATA STORAGE EQUIPMENT; GATES (TRANSISTOR); PHOTOTRANSISTORS; SILICON; THIN FILMS;

AMORPHOUS SILICON PHOTOTRANSISTORS (APT); AMORPHOUS SILICON THIN FILM TRANSISTOR (A-SI TFT); CHARGE STORAGE MODE; CONTACT TYPE IMAGE SENSOR; GRAY SCALE IMAGES; LARGE AREA SENSORS; SPLIT GATE ELECTRODES; STORAGE CAPACITOR;

IMAGE SENSORS;

EID: 0027187625     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.32.458     Document Type: Article

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