In situ bulk lifetime measurement on silicon with a chemically passivated surface

Applied Surface Science

Volumn 63, Issue 1-4, 1993, Pages 306-311

  Horanyi T S ^a   Pavelka, T ^a   Tutto P ^a  

^a SEMILAB SEMICONDUCTOR PHYSICS LABORATORY CO LTD   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; CORRELATION METHODS; MATHEMATICAL MODELS; OXIDATION; PASSIVATION; SURFACE TREATMENT;

BULK LIFETIME MAPS; IN SITU CHEMICAL SURFACE PASSIVATION; PHOTOCONDUCTIVE DECAY LIFETIME MEASURING TECHNIQUE;

SEMICONDUCTING SILICON;

EID: 0027187313     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/0169-4332(93)90112-O     Document Type: Article

References (6)

1. The passivation of electrically active sites on the surface of crystalline silicon by fluorination
2. A Comparison of Silicon Wafer Etching by KOH and Acid Solutions