Development of a double epitaxial junction-isolated substrate for power ICs

NEC Research and Development

Volumn 34, Issue 1, 1993, Pages 50-56

  Itoh, Yukio ^a   Kikuchi, Hiroaki ^a   Takahashi, Mitsuasa ^a   Okonogi, Kensuke ^a  

^a Compound Semiconductor Device Div ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROL SYSTEMS; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; INTEGRATED CIRCUIT LAYOUT; MOS DEVICES; RELIABILITY; SEMICONDUCTOR JUNCTIONS; SUBSTRATES;

DEVICE ISOLATION; DOUBLE EPITAXIAL JUNCTION ISOLATED SUBSTRATE; POWER INTEGRATED CIRCUITS;

INTEGRATED CIRCUITS;

EID: 0027150196     PISSN: 0547051X     EISSN: None     Source Type: Report    
DOI: None     Document Type: Report

References (0)