Selective embedded growth by LP-MOVPE in the Ga-In-As-P system

Journal of Crystal Growth

Volumn 125, Issue 1-2, 1992, Pages 347-362

  Westphalen, R ^a   Elsner, B ^a   Maassen, M ^a   Kayser, O ^a   Heime, K ^a   Balk, P ^a  

^a RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; ETCHING; ORGANOMETALLICS; SEMICONDUCTOR GROWTH;

SELECTIVE IMBEDDED GROWTH; VAPOR PHASE EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0027109739     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(92)90348-M     Document Type: Article

References (30)

1. Superconductivity of the System Nd1+2xBa2(1-x)Cu3Oy(0≤x≤0.4): Effect of the Magnetic Nd3+Ion Occupying the Ba-Site
2. Selective MOCVD growth of GaAlAs on partly masked substrates and its application to optoelectronic devices
3. Non-planar MOVPE growth using a novel shadow-masking technique
4. Optical properties of very narrow GaInAs/InP quantum wells grown by low-pressure metalorganic vapor phase epitaxy