Electron mobility in HgCdTe near the zero-band-gap grown by molecular beam epitaxy

Journal of Crystal Growth

Volumn 117, Issue 1-4, 1992, Pages 218-221

  Sone, S ^a   Oda, N ^a   Sasaki, T ^a   Kawano, M ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS - EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR MATERIALS - ELECTRONIC PROPERTIES;

ELECTRON MOBILITY; HALL EFFECT MEASUREMENT; MERCURY CADMIUM TELLURIDE; ZERO BAND GAP;

SEMICONDUCTING CADMIUM COMPOUNDS;

EID: 0027107958     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(92)90748-8     Document Type: Article

References (20)

1. Novel, free-carrier-induced optical nonlinearities of narrow-gap semiconductors
2. Modulation-doped HgCdTe
3. Kinetics of molecular-beam epitaxial HgCdTe growth
4. Conductivity type conversion in (Hg,Cd)Te
5. Energy gap versus alloy composition and temperature in Hg1−xCdxTe