Molecular-beam epitaxial growth of p- and n-type ZnSe homoepitaxial layers

Journal of Crystal Growth

Volumn 117, Issue 1-4, 1992, Pages 375-384

  Ohkawa, K ^a   Ueno, A ^a   Mitsuyu, T ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING FILMS - GROWTH; ZINC SELENIUM ALLOYS - FILMS;

ACTIVE NITROGEN DOPING; EXCITON EMISSION; HALL MOBILITY; HOMOEPITAXIAL LAYERS;

CRYSTALS;

EID: 0027107251     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(92)90779-I     Document Type: Article

References (37)

1. Coherent Growth of ZnSe on GaAs by MOCVD
2. Homo- and heteroepitaxial growth of high quality ZnSe by molecular beam epitaxy
3. ZnSe homo-epitaxial growth by molecular beam epitaxy
4. Growth of high-quality ZnSe by MOVPE on (100) ZnSe substrate
5. Homo-epitaxial growth of ZnSe by MBE
6. Treatment of ZnSe substrates for homoepitaxy
7. Characteristics of Cl-doped ZnSe layers grown by molecular-beam epitaxy
8. Phosphorus Acceptor Levels in ZnSe Grown by Molecular Beam Epitaxy
9. Arsenic doped ZnSe grown by molecular-beam epitaxy
10. Electroluminescence in an Oxygen-Doped ZnSe p-n Junction Grown by Molecular Beam Epitaxy
11. Doping of nitrogen acceptors into ZnSe using a radical beam during MBE growth
12. Experimental and theoretical investigation of the nitrogen laser
13. Y-Line Emission and Lattice Relaxation in MBE-ZnSe and -ZnSSe on GaAs
14. Molecular beam epitaxial growth of nitrogen-doped ZnSe with ion doping technique