One watt, very high frequency 10 and 18 GHz pseudomorphic HEMTs fabricated by dry first recess etching

IEEE MTT-S International Microwave Symposium Digest

Volumn 2, Issue , 1992, Pages 639-641

  Shanfield, S ^a   Platzker, A ^a   Aucoin, L ^a   Kazior, T ^a   Patel, B I ^a   Bertrand, A ^a   Hoke, W ^a   Lyman, P ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; MICROWAVE AMPLIFIERS; MICROWAVE DEVICES; POWER AMPLIFIERS;

DRY ETCHING; MICROWAVE POWER TRANSISTORS; MICROWAVE SEMICONDUCTOR DEVICES; PSEUDOMORPHIC HEMT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0027064183     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)