In-situ and ex-situ ellipsometric characterization for semiconductor technology (Invited Paper)

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 1678, Issue , 1992, Pages 246-257

  Woollam, John A ^a   Snyder, Paul G ^a   Yao, Huade ^a   Johs, Blaine D ^a  

^a UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE;

EX-SITU ELLIPSOMETRY; IN-SITU ELLIPSOMETRY;

ELLIPSOMETRY;

EID: 0027061603     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.60459     Document Type: Conference Paper

References (21)