The Inverse-Narrow-Width Effect of LOCOS Isolated n-MOSFET in a High-Concentration p-Well

IEEE Electron Device Letters

Volumn 13, Issue 12, 1992, Pages 636-638

  Ohe, K ^a   Yabu, T ^a   Kugo, S ^a   Umimoto, H ^a   Odanaka, S ^a  

^a PANASONIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; COMPUTER SIMULATION;

BORON SEGREGATION PHENOMENON; HIGH CONCENTRATION P-WELLS; INVERSE-NARROW-WIDTH EFFECT (INWE); LOCOS-ISOLATED N-MOSFET; THREE-DIMENSIONAL PROCESS/DEVICE SIMULATION; THRESHOLD BEHAVIOR;

MOSFET DEVICES;

EID: 0027005601     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192869     Document Type: Article

References (8)

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