Trench-Gate Base-Resistance-Controlled Thyristors (UMOS-BRT's)

IEEE Electron Device Letters

Volumn 13, Issue 12, 1992, Pages 597-599

  Baliga, B Jayant ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICE MODELS;

BASE-RESISTANCE-CONTROLLED THYRISTOR (BRT); MAXIMUM CONTROLLABLE CURRENT DENSITY; TRENCH GATE (UMOS) REGIONS; UMOS-BRTS;

TRANSISTORS;

EID: 0027004030     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192856     Document Type: Article

References (12)

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9. S.K. Ghandhi, Semiconductor Power Devices New York: Wiley, 1977, pp. 202–203.
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