A detailed Raman study of porous silicon

Thin Solid Films

Volumn 221, Issue 1-2, 1992, Pages 27-33

  Münder, H ^a   Andrzejak, C ^a   Berger, M G ^a   Klemradt, U ^a   Lüth, H ^a   Herino, R ^b   Ligeon, M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b UNIV GRENOBLE ALPES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FILMS; RAMAN SPECTROSCOPY;

NANOCRYSTALS; POROUS FILM; POROUS SILICON;

SILICON;

EID: 0026981794     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/0040-6090(92)90791-9     Document Type: Article

References (22)

1. Initial Stages of GaAs Molecular Beam Epitaxy Growth on Porous Si
2. Porous silicon: The material and its applications to SOI technologies
3. Photoluminescence of high porosity and of electrochemically oxidized porous silicon layers
4. The characterisation of porous silicon by Raman spectroscopy
5. Optical characterization of porous silicon layers formed on heavily p-doped substrates
6. The one phonon Raman spectrum in microcrystalline silicon
7. Raman scattering from small particle size polycrystalline silicon
8. Effects of As+ ion implantation on the Raman spectra of GaAs: ‘‘Spatial correlation’’ interpretation
9. Structural Change of Crystalline Porous Silicon with Chemisorption
10. Determination of lattice parameter and elastic properties of porous silicon by X-ray diffraction
11. Raman Scattering Characterization of Residual Stresses in Silicon-on-Sapphire
12. Porous silicon formation: A quantum wire effect
13. Appl. Surf. Sci.
14. Anharmonic effects in light scattering due to optical phonons in silicon
15. Effect of temperature gradients on the first-order Raman spectrum of Si