Influence of acid diffusion on the lithographic performance of chemically amplified resists

Japanese Journal of Applied Physics

Volumn 31, Issue 12 S, 1992, Pages 4294-4300

  Nakamura, Jiro ^a   Ban, Hiroshi ^a   Tanaka, Akinobu ^a  

^a NTT CORPORATION   (Japan)

Author keywords

Acid; Chemically amplified resist; Diffusion coefficient; Line width control; Post exposure baking; Resolution; Sensitivity

Indexed keywords

ACIDS; CATALYSTS; CHEMICAL REACTIONS; LITHOGRAPHY;

CHEMICALLY AMPLIFIED RESISTS;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0026973392     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.31.4294     Document Type: Article

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