Dependence of Hot-Carrier Immunity on Channel Length and Channel Width in MOSFET's with N2O-Grown Gate Oxides

IEEE Electron Device Letters

Volumn 13, Issue 12, 1992, Pages 651-653

  Lo, G Q ^a   Ahn, J ^a   Kwong, Dim Lee ^a   Young, K K ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b HEWLETT PACKARD COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HOT CARRIERS; NITROGEN COMPOUNDS; OXIDES;

CHANNEL GEOMETRY; CHANNEL LENGTH/WIDTH; FOWLER-NORDHEIM INJECTION STRESS; HOT CARRIER IMMUNITY;

MOSFET DEVICES;

EID: 0026962794     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192874     Document Type: Article

References (2)

1. C. Hu et al., “Hot-electron-induced MOSFET degradation-Model, monitor, and improvement,” IEEE Trans. Electron Devices, vol. ED-32, pp. 375–385, 1985.
2. T.Y. Chan, C.L. Chiang, and H. Gaw, “New insight into hot-electron