SCOPUS 정보 검색 플랫폼

Solid State Electronics

Volumn 35, Issue 12, 1992, Pages 1761-1770

Simulation of ultra thin film SOI transistors using a non-local ballistic model for impact ionisation

(2) Armstrong, G A a French, W D a

a QUEEN'S UNIVERSITY BELFAST (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; IONIZATION; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THIN FILM DEVICES;

BIPOLAR HOLDING VOLTAGE PREDICTION; IMPACT IONIZATION; LIGHTLY-DOPED DRAIN; LIGHTLY-DOPED SOURCE; NON-LOCAL BALLISTIC MODEL; TWO-DIMENSIONAL DEVICE SIMULATOR; ULTRA-THIN FILM SOI TRANSISTORS;

TRANSISTORS;

EID: 0026959233 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(92)90258-E Document Type: Article

Times cited : (6)

References (25)

1
- 0003783816
- Kluwer Academic Publishers
- (1991) Silicon-on-Insulator Technology: Materials to VLSI
- Colinge¹

2
- 0004005306
- Wiley, New York
- (1981) Physics of Semiconductor Devices
- Sze¹

3
- 0023999599
- (1988) IEEE Trans. Electron. Device , vol.35 ED , pp. 426
- Young¹ Burns²

4
- 0026172212
- (1991) IEEE Trans. Electron. Device , vol.38 ED , pp. 1384
- Choi¹ Fossum²

5
- 0019045647
- MINIMOS—A two-dimensional MOS transistor analyzer
- (1980) IEEE Transactions on Electron Devices , vol.27 ED , pp. 1540
- Selberherr¹

6
- 0002861764
- Problems related to p-n junctions in silicon
- (1961) Solid-State Electronics , vol.2 , pp. 825
- Shockley¹

7
- 0346427642
- An impact ionization model for two-dimensional device simulation
- (1985) IEEE Transactions on Electron Devices , vol.32 ED , pp. 400
- Thurgate¹ Chan²

8
- 0004176147
- McGraw-Hill, New York
- (1991) Bipolar Semiconductor Devices
- Roulston¹

9
- 0026105337
- (1991) IEEE Trans. Electron Device , vol.38 ED , pp. 328
- Armstrong¹

10
- 0024718053
- (1989) IEEE Trans. Electron. Device , vol.36 ED , pp. 1464
- Selberherr¹

11
- 84916517092
- Liverpool
- (1991) Proc. INFOS , pp. 335-338
- Armstrong¹ French²

12
- 4244159312
- (1985) IEDM Tech. Dig. , pp. 290-293
- del Alamo¹

13
- 85068336254
- Fla
- (1990) Proc. IEEE SOS/SOI Tech. Conf. , pp. 139-140
- Karulkar¹ Belk²

14
- 84916467549
- D. Kimpton and J. Kerr, GPS Marconi, Lincoln, private communication

15
- 0024945944
- Characterization of negative resistance and bipolar latchup in thin film SOI transistors by two-dimensional numerical simulation
- Nevada
- (1989) Proc. IEEE SOS/SOI Tech. Conf. , pp. 44-45
- Armstrong¹

16
- 25344473117
- (1987) IEDM Tech. Dig. , pp. 494-497
- Slotboom¹

17
- 0039147383
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modeling
- (1985) IEEE Transactions on Electron Devices , vol.32 ED , pp. 458
- Kato¹

18
- 0026835666
- (1992) IEEE Trans Electron. Device , vol.39 ED , pp. 581
- Rios¹

19
- 0024048586
- (1988) IEEE Trans Electron. Device , vol.35 ED , pp. 1012
- Edwards¹

20
- 0017449653
- (1977) J. appl. Phys. , vol.48 , pp. 286
- Ning¹

21
- 0021482804
- Hot-electron-induced photon and photocarrier generation in Silicon MOSFET's
- (1984) IEEE Transactions on Electron Devices , vol.31 ED , pp. 1116
- Tam¹

22
- 26744440164
- IEDM Tech. Dig.
- (1990) IEDM Tech. Dig. , pp. 591-594
- Yamaguchi¹

23
- 0007688657
- (1989) J. appl. Phys. , vol.65 , pp. 4279
- Chen¹ Tang²

24
- 0342344817
- Nottingham
- (1990) Proc. ESSDERC , pp. 453-456
- Lifka¹ Woerlee²

25
- 0025484016
- (1990) IEEE Trans. Electron. Device , vol.37 ED , pp. 2015
- Yoshimi¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.