Unified MOSFET model

Solid State Electronics

Volumn 35, Issue 12, 1992, Pages 1795-1802

  Shur, M ^a   Fjeldly, T A ^a,b   Ytterdal, T ^b   Lee, K ^c  

^a UNIVERSITY OF VIRGINIA   (United States)

^b NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

^c Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; SEMICONDUCTOR DEVICE MODELS;

ABOVE THRESHOLD REGIME; BELOW THRESHOLD REGIME; CHANNEL VELOCITY SATURATION; CHARGE CONTROL MODEL; EFFECTIVE DIFFERENTIAL CHANNEL CAPACITANCE; INJECTION BARRIER; PARAMETER EXTRACTION; SOFTWARE PACKAGE 'AIM-SPICE'; UNIFIED MOSFET MODEL;

MOSFET DEVICES;

EID: 0026959020     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90263-C     Document Type: Article

References (19)

1. Unified charge control model and subthreshold current in heterostructure field-effect transistors
2. Heterostructure FET model including gate leakage
3. The effect of high fields on MOS device and circuit performance