MODELLA—A New Physics-Based Compact Model for Lateral p-n-p Transistors

IEEE Transactions on Electron Devices

Volumn 39, Issue 11, 1992, Pages 2553-2561

  O'Hara, Francis G ^a   van den Biesen, Jan J H ^b   de Graaff, H C ^b   Kloosterman, W J ^b   Foley, J Barton ^c  

^a Telectronics Pacing Systems ^*  (Australia)

^b PHILIPS RESEARCH LABORATORIES   (Netherlands)

^c TRINITY COLLEGE DUBLIN   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER AIDED DESIGN; EQUIVALENT CIRCUITS; INTEGRATED CIRCUITS;

LATERAL P-N-P TRANSISTORS; NING-TANG RESISTANCE DETERMINATION; SOFTWARE PACKAGE MODELLA; SPICE GUMMEL-POON MODEL;

BIPOLAR TRANSISTORS;

EID: 0026955516     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.163463     Document Type: Article

References (14)

1. I. Kidron, “Integrated circuit model for lateral pnp transistors including isolation junction interaction,” Int. J. Electron., vol. 31, p. 421, 1971.
2. A. Vladimirescu et al., Spice version 2G.5 User's Guide. Berkeley, CA: Berkeley Univ., 1981.
3. F. G. O'Hara, “Physically based compact modelling of lateral pnp transistors,” M.Sc. thesis, Trinity College Dublin, Dublin, Ireland, 1990.
4. H. C. de Graaff and W. J. Kloosterman, “New formulation of the current and charge relations in bipolar transistor modelling for CACD purposes,” IEEE Trans. Electron Devices, vol. ED-32, no. 11, Nov. 1985.
5. J. Lindmayer and C. Y. Wrigley, Fundamentals of Semiconductor Devices. Princeton, NJ: Van Nostrand, 1965.
6. H. C. de Graaff and F. M. Klaassen, Compact Transistor Modelling for Circuit Design. New York: Springer-Verlag, 1990, ch. 3.
7. A. van der Ziel, Solid State Physical Electronics. Englewood Cliffs, NJ: Prentice-Hall, 1968, eq. 16.71.
8. S. Chou, “An investigation of lateral transistors—DC characteristics,” Solid-State Electron., vol. 14, p. 811, 1971.
9. H. C. de Graaff and F. M. Klaassen, Compact Transistor Modeling for Circuit Design. New York: Springer-Verlag, 1990, ch. 5.
10. J. M. Early, “Effects of space-charge widening in junction transistors,” Proc. IRE, vol. 40, p. 1401, 1952.
11. W. M. Webster, vol. Proc. IRE, vol. 42, p. 914, 1954.
12. T. H. Ning and D. D. Tang, “Method for determining the emitter and base series resistances of bipolar transistors,” IEEE Trans. Electron Devices, vol. ED-31, p. 409, 1984.
13. F. G. O'Hara, J. J. H. van den Biesen, H. C. de Graaff, and J. B. Foley, “A new physical compact model for lateral pnp transistors,” in Proc. IEEE, Bipolar Circuits and Technology Meet. (Minneapolis, MN), Sept. 1990, p. 102.
14. K. S. Seo and C. K. Kim, “On the geometrical factor of lateral p-n-p transistors,” IEEE Trans. Electron Devices, vol. ED-27, p. 295, Jan. 1980.