IIIA-1 Dynamic Charge Storage in 6H-Silicon Carbide: Prospects for High-Speed Nonvolatile RAM's

IEEE Transactions on Electron Devices

Volumn 39, Issue 11, 1992, Pages 2646-2647

  Cooper, J A ^a   Palmour, J W ^a,b   Gardner, C T ^a   Melloch, M R ^a   Carter, C H ^a,b  

^a PURDUE UNIVERSITY   (United States)

^b Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; SEMICONDUCTOR JUNCTIONS; SEMICONDUCTOR STORAGE; SILICON CARBIDE;

HIGH-SPEED NONVOLATILE RAM; N-I-P-I-N STORAGE CAPACITORS; P-N JUNCTIONS; SUMMARY ONLY;

NONVOLATILE STORAGE;

EID: 0026954489     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.163499     Document Type: Article

References (1)

1. J. A. Cooper, Jr., J. W. Palmour, C. T. Gardner, M. R. Melloch, and C. H. Carter, Jr., “Bulk and Perimeter Generation in 6H-SiC Diodes,” Int'l. Semiconductor Device Research Symp., Charlottesville, VA, December 1991.