메뉴 건너뛰기




Volumn 27, Issue 11, 1992, Pages 1497-1503

A 15-ns 16-Mb CMOS SRAM with Interdigitated Bit-Line Architecture

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFIERS (ELECTRONIC); CMOS INTEGRATED CIRCUITS; COMPUTER ARCHITECTURE; SEMICONDUCTOR STORAGE; THIN FILM DEVICES;

EID: 0026954381     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.165328     Document Type: Article
Times cited : (23)

References (11)
  • 1
    • 0024090004 scopus 로고
    • A 15-ns 1-Mb CMOS SRAM
    • Oct.
    • K. Sasaki et al., “A 15-ns 1-Mb CMOS SRAM,” IEEE J. Solid-State Circuits, vol. 23, pp. 1067-1072, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1067-1072
    • Sasaki, K.1
  • 2
    • 0024091767 scopus 로고
    • A 18-ns 1-Mb CMOS SRAM
    • Oct.
    • H. Shimada et al., “A 18-ns 1-Mb CMOS SRAM,” IEEE J. Solid-State Circuits, vol. 23, pp. 1073-1077, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1073-1077
    • Shimada, H.1
  • 3
    • 0024091766 scopus 로고
    • A 14-ns 1-Mb CMOS SRAM with variable bit organization
    • Oct.
    • T. Wada et al., “A 14-ns 1-Mb CMOS SRAM with variable bit organization,” IEEE J. Solid-State Circuits, vol. 23, pp. 1060-1066, Oct. 1988.
    • (1988) IEEE J. Solid-State Circuits , vol.23 , pp. 1060-1066
    • Wada, T.1
  • 4
    • 0025507112 scopus 로고
    • A 15-na 4-Mb CMOS SRAM
    • Oct.
    • S. Aizaki et al., “A 15-na 4-Mb CMOS SRAM,” IEEE J. Solid-State Circuits, vol. 25, pp. 1063-1067, Oct. 1990.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , pp. 1063-1067
    • Aizaki, S.1
  • 5
    • 0025507026 scopus 로고
    • A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell
    • Oct.
    • T. Ootani et al., “A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell,” IEEE J. Solid-State Circuits, vol. 25, pp. 1082-1092, Oct. 1990.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , pp. 1082-1092
    • Ootani, T.1
  • 6
    • 0025502962 scopus 로고
    • A 23-ns 4-Mb CMOS SRAM with 0.2-μA standby current
    • Oct.
    • K. Sasaki et al., “A 23-ns 4-Mb CMOS SRAM with 0.2-μA standby current,” IEEE J. Solid-State Circuits, vol. 25, pp. 1075-1081, Oct. 1990.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , pp. 1075-1081
    • Sasaki, K.1
  • 7
    • 0025502963 scopus 로고
    • A 20-ns 4-Mb CMOS SRAM with hierarchical word decoding architecture
    • Oct.
    • T. Hirose et al., “A 20-ns 4-Mb CMOS SRAM with hierarchical word decoding architecture,” IEEE J. Solid-State Circuits, vol. 25, pp. 1068-1074, Oct. 1990.
    • (1990) IEEE J. Solid-State Circuits , vol.25 , pp. 1068-1074
    • Hirose, T.1
  • 8
    • 84989408053 scopus 로고
    • A 15ns 16Mb CMOS SRAM with reduced voltage amplitude data bus
    • Feb.
    • M. Matsumiya et al., “A 15ns 16Mb CMOS SRAM with reduced voltage amplitude data bus,” in ISSCC Dig. Tech. Papers, Feb. 1992, pp. 214-215.
    • (1992) ISSCC Dig. Tech. Papers , pp. 214-215
    • Matsumiya, M.1
  • 9
    • 84954172979 scopus 로고
    • A split wordline cell for 16Mb SRAM using polysilicon sidewall contacts
    • Dec.
    • K. Itabashi et al., “A split wordline cell for 16Mb SRAM using polysilicon sidewall contacts,” in IEDM Tech. Dig., Dec. 1991, pp. 477-480.
    • (1991) IEDM Tech. Dig. , pp. 477-480
    • Itabashi, K.1
  • 10
    • 0026254962 scopus 로고
    • A 21 mW 4-Mb CMOS SRAM for battery operation
    • Nov.
    • S. Murakami et al., “A 21 mW 4-Mb CMOS SRAM for battery operation,” IEEE J. Solid-State Circuits, vol. 26, pp. 1563-1570, Nov. 1991.
    • (1991) IEEE J. Solid-State Circuits , vol.26 , pp. 1563-1570
    • Murakami, S.1
  • 11
    • 0026257764 scopus 로고
    • A 40 ns 64 Mb DRAM with parallel data bus architecture
    • Nov.
    • M. Taguchi et al., “A 40 ns 64 Mb DRAM with parallel data bus architecture,” IEEE J. Solid-State Circuits, vol. 26, pp. 1493-1497, Nov. 1991.
    • (1991) IEEE J. Solid-State Circuits , vol.26 , pp. 1493-1497
    • Taguchi, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.