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Electronics Letters
Volumn 28, Issue 24, 1992, Pages 2258-2259
InGaAs/InP waveguide photodetector with high saturation intensity
Author keywords

Integrated optics; Optoelectronics; Photodetectors
Indexed keywords

INTEGRATED OPTICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; WAVEGUIDES;
EID: 0026954106     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921452     Document Type: Article
Times cited : (27)
References (8)
  • 1
    • 0023347707 scopus 로고
    • High speed, self-passivated InGaAs PIN photodiode for microwave fibre links
    • FAN, C., YU, P. K. L., and CHEN, P. C.: ‘High speed, self-passivated InGaAs PIN photodiode for microwave fibre links’, Electron. Lett., 1987, 23, pp. 571-572
    • (1987) Electron. Lett. , vol.23 , pp. 571-572
    • FAN, C.1    YU, P.K.L.2    CHEN, P.C.3
  • 2
    • 0022422008 scopus 로고
    • Planar InGaAs PIN photodiode with a semi-insulating InP cap layer
    • CAMPBELL, J. C., DENTAI, A. G., QUA, G. J., LONG, J., and RIGGS, V. G.: ‘Planar InGaAs PIN photodiode with a semi-insulating InP cap layer’, Electron. Lett., 1985, 21, pp. 447-448
    • (1985) Electron. Lett. , vol.21 , pp. 447-448
    • CAMPBELL, J.C.1    DENTAI, A.G.2    QUA, G.J.3    LONG, J.4    RIGGS, V.G.5
  • 3
    • 0023670581 scopus 로고
    • Ultrawide-band long-wavelength p-i-n photodetectors
    • BOWERS, J. E., and BURRUS, C. A.: ‘Ultrawide-band long-wavelength p-i-n photodetectors’, J. Lightwave Technol., 1987, LT-5, pp. 1339-1359
    • (1987) J. Lightwave Technol. , vol.LT-5 , pp. 1339-1359
    • BOWERS, J.E.1    BURRUS, C.A.2
  • 4
    • 0022766591 scopus 로고
    • High-speed zero bias waveguide photodetectors
    • BOWERS, J. E., and BURRUS, C. A.: ‘High-speed zero bias waveguide photodetectors’, Electron. Lett., 1986, 22, pp. 905-906
    • (1986) Electron. Lett. , vol.22 , pp. 905-906
    • BOWERS, J.E.1    BURRUS, C.A.2
  • 5
    • 0026418133 scopus 로고
    • 5 0 G H z InGaAs edge-coupled pin photodetector
    • WAKE, D., SPOONER, T. P., PERRIN, S. D., and HENNING, I. D.: ‘ 5 0 G H z InGaAs edge-coupled pin photodetector’, Electron. Lett., 1991, 27, pp. 1073-1075
    • (1991) Electron. Lett. , vol.27 , pp. 1073-1075
    • WAKE, D.1    SPOONER, T.P.2    PERRIN, S.D.3    HENNING, I.D.4
  • 6
    • 0026157478 scopus 로고
    • Highefficiency waveguide InGaAs PIN photodiode with bandwidth of over 40 GHz
    • KATO, K., HATA, S., KOZEN, A., YOSHIDA, J., and KAWANO, K.: ‘Highefficiency waveguide InGaAs PIN photodiode with bandwidth of over 40 GHz’, IEEE Photonics Technol. Lett., 1991, 3, pp. 473-474
    • (1991) IEEE Photonics Technol. Lett. , vol.3 , pp. 473-474
    • KATO, K.1    HATA, S.2    KOZEN, A.3    YOSHIDA, J.4    KAWANO, K.5
  • 7
    • 0026939557 scopus 로고
    • Simulation and interpretation of fast rise time light-activated p-i-n diode switches
    • SUN, C. K., YU, P. K. L., CHANG, C.-T., and ALBARES, D. J.: ‘Simulation and interpretation of fast rise time light-activated p-i-n diode switches’, IEEE Trans., 1992, ED-39, pp. 2240-2247
    • (1992) IEEE Trans. , vol.ED-39 , pp. 2240-2247
    • SUN, C.K.1    YU, P.K.L.2    CHANG, C.-T.3    ALBARES, D.J.4
  • 8
    • 0025469251 scopus 로고
    • Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination
    • DENTAN, M., and DE CREMOUX, B. D.: ‘Numerical simulation of the nonlinear response of a p-i-n photodiode under high illumination’, J. Lightwave Technol., 1990, LT-8, pp. 1137-1144
    • (1990) J. Lightwave Technol. , vol.LT-8 , pp. 1137-1144
    • DENTAN, M.1    DE CREMOUX, B.D.2

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.