High-Speed, 100+ W RF Switches Using GaAs MMICs

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 11, 1992, Pages 1989-1996

  Katzin, Peter ^a   Bedard, Brian E ^a   Shifrin, Mitchell B ^a   Ayasli, Yalcin ^a  

^a Hittite Microwave Corporation   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; HYBRID INTEGRATED CIRCUITS; MESFET DEVICES; MICROWAVE DEVICES; MONOLITHIC INTEGRATED CIRCUITS; OPTIMIZATION; SEMICONDUCTING GALLIUM ARSENIDE;

C-BAND SWITICHES; MICROWAVE MESFET SWITCHES; MMIC CHIPS; RF SWITCHES; S-BAND SWITCHES; SPDT SWITCHES; SUSPENDED-SUBSTRATE HYBRID CIRCUIT; SWITCH RISETIMES/FALLTIMES;

SEMICONDUCTOR SWITCHES;

EID: 0026943383     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.168755     Document Type: Article

References (6)

1. Y. Ayasli, R. Mozzi, L. Hanes, and L. D. Reynolds, “An X-band 10 W monolithic transmit-receive GaAs FET switch,” IEEE Microwave and Millimeter Wave Monolithic Circuits Symp. Dig., May 1982, pp. 42–46.
2. M. Schindler and T. Kazior, “A high power 2–18 GHz T/R switch,” in IEEE MTT-S Int. Microwave Symp. Dig., May 1990, pp. 453–456.
3. F. McGrath, C. Varmazis, C. Kermarrec, and R. Pratt, “Novel high performance SPDT power switches using multi-gate FETs,” IEEE MTT-S Int. Microwave Symp. Dig., June 1991, pp. 839–842.
4. M. Shifrin, P. Katzin, and Y. Ayasli, “Monolithic FET structures for high-power control component applications,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 2134–2141, Dec. 1989.
5. Y. Ayasli and P. J. Katzin, “High-power rf switching system,” U.S. Patent No. 5012123.
6. H. Statz, P. Newman, I. W. Smith, R. A. Pucel, and H. A. Haus, “GaAs FET device and circuit simulation in SPICE,” IEEE Trans. Electron Devices, vol. ED-34, pp. 160–169, 1987.