An improved model for the erase operation of a FLOTOX EEPROM cell

Solid State Electronics

Volumn 35, Issue 10, 1992, Pages 1513-1520

  Chang, Ming Bing ^a   Sharma, Umesh ^a   Cheng, Shih K ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRIC CURRENTS; ELECTRIC FIELDS; ELECTRON TUNNELING; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SURFACE PROPERTIES; VOLTAGE MEASUREMENT;

ELECTRICAL ERASABLE PROGRAMMABLE READ ONLY MEMORIES (EEPROMS); ERASE OPERATION; FLOTOX CELLS; MEMORY CELLS; STATE THRESHOLD VOLTAGE; TUNNELING OXIDE;

PROM;

EID: 0026941871     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(92)90092-Q     Document Type: Article

References (6)

1. Analysis and modeling of floating-gate EEPROM cells