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Volumn 27, Issue 10, 1992, Pages 1379-1387

Thermal Design and Simulation of Bipolar Integrated Circuits

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; COMPUTER SIMULATION; HETEROJUNCTIONS; SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0026941843     PISSN: 00189200     EISSN: 1558173X     Source Type: Journal    
DOI: 10.1109/4.156441     Document Type: Article
Times cited : (44)

References (15)
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    • Konaka, S.1    Yamamoto, Y.2    Sakai, T.3
  • 3
    • 0026238534 scopus 로고
    • High speed 8: 1 multiplexor and 1 :8 demultiplexer implemented with AlGaAs/GaAs HBTs
    • Oct.
    • R. B. Nubling et al., “High speed 8: 1 multiplexor and 1 :8 demultiplexer implemented with AlGaAs/GaAs HBTs,” IEEE J. Solid-State Circuits., vol. 26, pp. 1354–1361, Oct. 1991.
    • (1991) IEEE J. Solid-State Circuits. , vol.26 , pp. 1354-1361
    • Nubling, R.B.1
  • 4
    • 0007905164 scopus 로고    scopus 로고
    • Measurement and prediction of operating temperatures for GaAs ICs
    • paper A.5.
    • D. Smith and J. O'Neil, “Measurement and prediction of operating temperatures for GaAs ICs,” in IEEE SEMITHERM 86 Proc., paper A.5.
    • IEEE SEMITHERM 86 Proc.
    • Smith, D.1    O'Neil, J.2
  • 5
    • 0026622226 scopus 로고    scopus 로고
    • Thermal simulation and design of a GaAs HBT sample and hold circuit
    • K. Poulton et al., “Thermal simulation and design of a GaAs HBT sample and hold circuit,” in 1991 GaAs IC Symp. Tech. Dig., pp. 129-132.
    • 1991 GaAs IC Symp. Tech. Dig. , pp. 129-132
    • Poulton, K.1
  • 6
    • 0020193772 scopus 로고
    • Semiconducting and other major properties of gallium arsenide
    • Oct.
    • J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys., vol. 53, no. 10, R123–R181, Oct. 1982.
    • (1982) J. Appl. Phys. , vol.53 , Issue.10 , pp. R123-R181
    • Blakemore, J.S.1
  • 7
    • 0037885822 scopus 로고
    • Thermal design of power GaAs FETs
    • Dilorenzo et al., Eds. Dedham, MA: Artech House
    • Whemple et al., “Thermal design of power GaAs FETs,” in GaAs FET Principles and Technology, Dilorenzo et al., Eds. Dedham, MA: Artech House, 1982, pp. 313–347.
    • (1982) GaAs FET Principles and Technology , pp. 313-347
    • Whemple1
  • 8
    • 84941440643 scopus 로고
    • ictherm
    • program unpublished
    • G. Pfeiffer, Hewlett Packard, program “ictherm,” unpublished, 1989.
    • (1989) Hewlett Packard
    • Pfeiffer, G.1
  • 9
    • 0024914812 scopus 로고
    • A general integration algorithm for the inverse Fourier transform of four-layer infinite plate structures
    • Dec.
    • C. C. Lee, Y. J. Min, and A. L. Palisoc, “A general integration algorithm for the inverse Fourier transform of four-layer infinite plate structures,” IEEE Trans. Components, Hybrids, Manuf. Technol., vol. 12, no. 4, pp. 710–716, Dec. 1989.
    • (1989) IEEE Trans. Components, Hybrids, Manuf. Technol. , vol.12 , Issue.4 , pp. 710-716
    • Lee, C.C.1    Min, Y.J.2    Palisoc, A.L.3
  • 10
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    • T. Knotts, Hewlett Packard, program “fe,” unpublished, 1988.
    • (1988)
    • Knotts, T.1
  • 12
    • 84941451576 scopus 로고
    • TMA, Inc., Palo Alto, CA
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    • (1991) Raphael User's Manual
  • 13
    • 0014834628 scopus 로고
    • Thermal properties of very fast transistors
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    • Joy, R.C.1    Schlig, E.S.2
  • 14
    • 0026868349 scopus 로고
    • Determination of junction temperature in AIGaAs/GaAs HBT's by electrical measurement
    • May
    • J. R. Waldrop, K. C. Wang, and P. M. Asbeck. “Determination of junction temperature in AIGaAs/GaAs HBT's by electrical measurement,” IEEE Trans. Electron Devices, vol. 39, pp. 1248–1250, May 1992.
    • (1992) IEEE Trans. Electron Devices , vol.39 , pp. 1248-1250
    • Waldrop, J.R.1    Wang, K.C.2    Asbeck, P.M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.