Characteristics of 0.8 and 0.2-um Gate Length InxGa1-xAs/Ino0.52Al0.48As/InP (0.53 ≤ x ≤ 0.70) Modulation-Doped Field-Effect Transistors at Cryogenic Temperatures

IEEE Transactions on Electron Devices

Volumn 39, Issue 10, 1992, Pages 2206-2213

  Lai, Richard ^a   Bhattacharya, Pallab K ^a   Yang, David ^a   Brock, Timothy L ^a   Alterovitz, Samuel A ^b   Downey, Alan N ^b  

^a UNIVERSITY OF MICHIGAN   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS; ELECTRIC FIELDS; ELECTRON TRANSPORT PROPERTIES; EQUIVALENT CIRCUITS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; MONTE CARLO METHODS;

CUTOFF FREQUENCY; MODFET STRUCTURES; MODULATION-DOPED FET;

FIELD EFFECT TRANSISTORS;

EID: 0026941834     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158789     Document Type: Article

References (13)

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