Optoelectronic Transient Characterization of Ultrafast Devices

IEEE Journal of Quantum Electronics

Volumn 28, Issue 10, 1992, Pages 2313-2324

  Frankel, Michael Y ^a   Whitaker, John F ^b   Mourou, Gerard A ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DIGITAL COMMUNICATION SYSTEMS; OPTICAL COMMUNICATION; ULTRAFAST PHENOMENA;

SOFTWARE PACKAGE SPICE;

OPTOELECTRONIC DEVICES;

EID: 0026941658     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.159538     Document Type: Article

References (49)

1. P. Ho, M. Y. Kao, P. C. Chao, K. H. G. Duh, J. M. Ballingall, S. T. Allen, A. J. Tessmer, and P. M. Smith, “Extremely high gain 0.15 μm gate-length InAlAs/InGaAs/InP HEMTs,” Electron. Lett., vol. 27, no. 4, p. 325, 1991.
2. G. I. Ng, Y. Kwon, and D. Pavlidis, “Submicrometer devices and monolithic functions using InAlAs/InGaAs heterostructures,” presented at First International Symposium on Space Terahertz Technology, Mar. 1990.
3. Tektronix 1991 product catalog.
4. K. J. Weingarten, M. J. W. Rodwell, and D. M. Bloom, “Picosec- ond optical sampling of GaAs integrated circuits,” IEEE J. Quantum Electron., vol. 24, pp. 198–220, Feb. 1988.
5. W. R. Scott, Jr. and G. S. Smith, “Error corrections for an automated time-domain network analyzer,” IEEE Trans. Instrum. Meas., vol. IM-35, pp. 300–303, Sept. 1986.
6. R. Schmitt, D. Winkler, and B. Lischke, “E-beam testing of high-speed electronic devices,” Microelectron. Engin., vol. 5, pp. 523–530, 1986.
7. K. A. Jenkins, and J. D. Cressler, “Electron-beam damage of self-aligned silicon bipolar transistors and circuits,” IEEE Trans. Electron Devices, vol. 38, pp. 1450–1458, June 1991.
8. J. A. Valdmanis, “Electro-optic measurement techniques for picosecond materials, devices, and integrated circuits,” in Measurement of High-Speed Signals in Solid State Devices, R. B. Marcus, Ed. San Diego, CA: Academic, 1990, pp. 136–219.
9. C. H. Lee, “Picosecond optics and microwave technology,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 596–607, May 1990.
10. M. Matloubian, H. Fetterman, M. Kim, A. Oki, J. Camou, S. Moss, and D. Smith, “Picosecond optoelectronic measurement of S parameters and optical response of an AlGaAs/GaAs HBT,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 683–686, May 1990.
11. D. H. Auston, “Picosecond optoelectronic switching and gating in silicon,” Appl. Phys. Lett., vol. 26, pp. 101–103, 1975.
12. C. H. Lee and S. Jayaraman, Optoelectron., vol. 6, p. 115, 1974.
13. J. A. Valdmanis, G. A. Mourou, and C. W. Gabel, “Picosecond electro-optic sampling system,” Appl. Phys. Lett., vol. 41, pp. 211–212, Aug. 1982.
14. B. H. Kolner, D. M. Bloom, and P. S. Cross, “Electrooptic sampling with picosecond resolution,” Electron. Lett., vol. 19, pp. 574–575, July 1983.
15. J. A. Valdmanis, and R. L. Fork, “Design considerations for a femtosecond pulse laser balancing self phase modulation, group velocity dispersion, saturable absorption and saturable gain,” IEEE J. Quantum Electron., vol. QE-22, pp. 112–118, Jan. 1986.
16. D. H. Auston, “Picosecond photoconductors: physical properties and applications,” in Picosecond Optoelectronic Devices, Chi H. Lee, Ed. Orlando, FL: Academic, 1984, pp. 73–117.
17. B. H. Kolner, “Intensity noise enhancement in the half-wave plate/polarizer attenuator,” Opt. Lett., vol. 16, pp. 784–786, June 1991.
18. J. M. Chwalek, and D. R. Dykaar, “A mixer based electro-optic sampling system for submillivolt signal detection,” Rev. Scientific Instr., vol. 61, pp. 1273–1276, Apr. 1990.
19. J. A. Valdmanis, “Subpicosecond electro-optic sampling,” Ph.D. dissertation, University of Rochester, Rochester, NY, 1983.
20. M. Shinagawa, and T. Nagatsuma, “A subpicosecond external electro-optic prober using laser diodes,” in Proc., 1990 Int. Test Conf., Washington, DC, pp. 1035–1039.
21. M. Y. Frankel, J. F. Whitaker, G. A. Mourou, and J. A. Valdmanis, “Experimental characterization of external electrooptic probes,” IEEE Microwave and Guided Wave Lett., vol. 1, pp. 60–62, Mar. 1991.
22. P. P. Vasil’ev, “Picosecond optoelectronics,” Sov. J. Quantum Electron., vol. 20, pp. 209–227, Mar. 1990.
23. D. R. Grischkowsky, M. B. Ketchen, C.-C. Chi, I. N. Duling, III, N. J. Halas, J. Halbout, and P. G. May, “Capacitance free generation and detection of subpicosecond electrical pulses on coplanar transmission lines,” IEEE J. Quantum Electron., vol. 24, pp. 221–225, Feb. 1988.
24. F. E. Doany, D. Grischkowsky, and C.-C. Chi, “Carrier lifetime versus ion-implantation dose in silicon on sapphire,” Appl. Phys. Lett., vol. 50, no. 8, Feb. 1987.
25. P. M. Downey and B. Schwartz, “Picosecond photoresponse in 3He+ bombarded InP photoconductors,” Appl. Phys. Lett., vol. 44, no. 2, pp. 207–209, Jan. 1984.
26. M. C. Nuss, D. W. Kisker, P. R. Smith, and T. E. Harvey, “Efficient generation of 480 fs electrical pulses on transmission lines by photoconductive switching in metalorganic chemical vapor deposited CdTe,” Appl. Phys. Lett., vol. 54, no. 1, pp. 57–59, Jan. 1989.
27. F. W. Smith, S. Gupta, H. Q. Le, V. Diadiuk, M. A. Hollis, A. R. Calawa, M. Frankel, D. R. Dykaar, G. A. Mourou, and T. Y. Hsiang, “Picosecond GaAs-based photoconductive optoelectronic detectors,” Appl. Phys. Lett., vol. 54, no. 10, pp. 890–892, Mar. 1989.
28. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. Whitaker, G. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at very low temperatures,” Appl. Phys. Lett., vol. 59, no. 25, pp. 3276–3278, Dec. 1991.
29. M. Y. Frankel, J. F. Whitaker, G. A. Mourou, and J. A. Valdmanis, “Ultrahigh-bandwidth vector network analyzer based on external electro-optic sampling,” Sol. St. Electron., vol. 35, pp. 325–332, Mar. 1992.
30. K. W. Goossen, H. Roskos, M. C. Nuss, D. W. Kisker, B. Tell, A. E. White, K. T. Short, D. C. Jacobson, and J. M. Poate, “Nearly dispersionless microstrip for 100 GHz pulses utilizing a buried silicide groundplane,” in Tech. Dig., 1991 IEEE MTT-S Int. Microwave Symp., pp. 1053–1056.
31. N. G. Paulter, D. N. Sinha, A. J. Gibbs, and W. R. Eisenstadt, “Optoelectronic measurements of picosecond electrical pulse propagation in coplanar waveguide transmission lines,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1612–1619, Oct. 1989.
32. M. Scheuermann, “Effect of line resistance on picosecond optoelectronic probes and device characterization,” in Proc., LEOS 1991 Summer Top. Meet., Newport Beach, CA, July 1991, pp. 9–10.
33. G. Hasnain, A. Dienes, and J. R. Whinnery, “Dispersion of picosecond pulses in coplanar transmission lines,” IEEE Trans. Microwave Theory Tech., vol. MTT-34, pp. 738–741, June 1986.
34. D. B. Rutledge, D. P. Neikirk, and D. P. Kasilingham, in Infrared and millimeter waves, K. J. Button, Ed. New York: Academic, 1983, vol. 10, pt. II.
35. M. Y. Frankel, S. Gupta, J. A. Valdmanis, and G. A. Mourou, “Terahertz attenuation and dispersion properties of coplanar transmission lines,” IEEE Trans. Microwave Theory Tech., vol. 39, pp. 910–916, June 1991.
36. K. C. Gupta, R. Garg, and I. J. Bahl, Microstrip lines and slot lines. Dedham, MA: Artech, 1979.
37. M. J. W. Rodwell, M. Riaziat, K. J. Weingarten, B. A. Auld, and D. M. Bloom, “Internal microwave propagation and distortion characteristics of travelling-wave amplifiers studied by electrooptic sampling,” IEEE Trans. Microwave Theory Tech., vol. 34, pp. 1356–1362, Dec. 1986.
38. M. K. Jackson, M. Y. Frankel, J. F. Whitaker, G. A. Mourou, D. Hulin, A. Antonetti, M. Van Hove, W. De Raedt, P. Crozat, and H. Hafdallah, “Large-signal switching characteristics of a pseudomorphic AlGaAs/InGaAs MODFET on a picosecond time scale,” submitted to Appl. Phys. Lett.
39. M. Y. Frankel, “Ultrafast device characterization,” Ph.D. dissertation, University of Michigan, 1991.
40. D. J. Widiger, I. C. Kizilyalli, K. Hess, and J. J. Coleman, “Two-dimensional transient simulation of an idealized high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-32, pp. 1092–1102, June 1985.
41. V. Ravaioli, and D. K. Ferry, “MODFET ensemble Monte Carlo model including the quasi-two-dimensional electron gas,” IEEE Trans. Electron Devices, vol. ED-33, pp. 677–681, May 1986.
42. M. Bagheri, “An improved MODFET microwave analysis,” IEEE Trans. Electron Devices, vol. 35, pp. 1147–1149, July 1988.
43. H. R. Yeager, and R. W. Dutton, “Circuit simulation models for the high electron mobility transistor,” IEEE Trans. Electron Devices, vol. ED-33, pp. 682–691, May 1986.
44. G. W. Wang, I. Ichitsubo, W. H. Ku, Y. K. Chen, and L. F. Eastman, “Large-signal time-domain simulation of HEMT mixers,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 756–759, Apr. 1988.
45. P. M. Smith, L. F. Lester, P.-C. Chao, P. Ho, R. P. Smith, J. M. Ballingall, and M.-Y. Kao, “A 0.25-μm gate-length pseudomorphic HFET with 32-mW output power at 94 GHz,” IEEE Electron Device Lett., vol. 10, pp. 437–439, Oct. 1989.
46. G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design. Englewood Cliffs, NJ: Prentice-Hall, 1984.
47. S. L. Huang, L. P. Golob, E. A. Chauchard, C. H. Lee, T. Smith, T. T. Lee, and T. R. Joseph, “Time window limited dynamic range of photoconductive sampling,” in LEOS 1991 Summer Topical Meet. Dig., Newport Beach, CA, pp. 7–8.
48. S. Dhar, W.-P. Hong, P. K. Bhattacharya, Y. Nashimoto, and F.-Y. Juang, “A detailed investigation of the D-X center and other trap levels in GaAs-AlxGa1-xAs modulation doped heterostructures grown by molecular-beam epitaxy,” IEEE Trans. Electron Devices, vol. ED-33, pp. 698–706, May 1986.
49. C. Canali, C. Tedesco, E. Zanoni, G. Castellaneta, F. Magistrali, and M. Sangalli, “Kink effect, transconductance increase and field enhanced electron emission in AlGaAs/GaAs HEMTs,” Electron. Lett., vol. 26, pp. 1520–1522, Aug. 1990.