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Volumn 39, Issue 10, 1992, Pages 2298-2311

Mosfet Effective Channel Length, Threshold Voltage, And Series Resistance Determination By Robust Optimization

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; OPTIMIZATION; SPURIOUS SIGNAL NOISE;

EID: 0026940475     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158802     Document Type: Article
Times cited : (50)

References (12)
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  • 2
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  • 3
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    • Aug.
    • C. Ciofi, M. Macucci, and B. Pellegrini, “A new measurement method of MOS transistor parameters,” Solid-State Electron., vol. 33, no. 8, pp. 1065–1069, Aug. 1990.
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    • Ciofi, C.1    Macucci, M.2    Pellegrini, B.3
  • 4
    • 0021482945 scopus 로고
    • Accuracy of and effective channel length/extemal resistance extraction algorithm for MOSFETs
    • Sept.
    • S. E. Laux, “Accuracy of and effective channel length/extemal resistance extraction algorithm for MOSFETs,” IEEE Trans. Electron Devices, vol. ED-31, no. 9, pp. 1245–1251, Sept. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , Issue.9 , pp. 1245-1251
    • Laux, S.E.1
  • 5
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    • Apr.
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    • (1982) IEEE Trans. Computer-Aided Dev. , vol.CAD-1 , Issue.2 , pp. 85-93
    • Engl, W.L.1    Laur, R.2    Dirks, H.K.3
  • 6
    • 0019057709 scopus 로고
    • Experimental derivation of the source and drain resistance of MOS transistors
    • Sept.
    • P. I. Suciu and R. L. Johnston, “Experimental derivation of the source and drain resistance of MOS transistors,” IEEE Trans. Electron Devices, vol. ED-27, no. 9, pp. 1846–1848, Sept. 1980.
    • (1980) IEEE Trans. Electron Devices , vol.ED-27 , Issue.9 , pp. 1846-1848
    • Suciu, P.I.1    Johnston, R.L.2
  • 7
    • 0018468995 scopus 로고
    • A new method to determine effective MOS FET channel length
    • K. Terada and H. Muta, “A new method to determine effective MOS FET channel length,” Japan. J. Appl. Phys., vol. 18, no. 5, p. 953, 1979.
    • (1979) Japan. J. Appl. Phys. , vol.18 , Issue.5 , pp. 953
    • Terada, K.1    Muta, H.2
  • 9
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    • A modification on ‘An improved method to determine MOSFET channel length’
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    • (1985) IEEE Electron Device Lett. , vol.EDL-6 , Issue.3 , pp. 109
    • Whitfield, J.1
  • 10
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    • Gate-voltage-dependent effective channel length and series resistance of LDD MOSFETs
    • Dec.
    • G. J. Hu, C. Chang, and Y.-T. Chia, “Gate-voltage-dependent effective channel length and series resistance of LDD MOSFETs,” IEEE Trans. Electron Devices, vol. ED-34, no. 12, pp. 2469–2475, Dec. 1987.
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    • Hu, G.J.1    Chang, C.2    Chia, Y.-T.3
  • 11
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    • J. E. Dennis, D. M. Gay, and R. E. Welsch, “An adaptive nonlinear least squares algorithm,” ACM Trans. Math. Software, vol. 7, pp. 348–368, 1981.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.