Ultrafast Carrier Dynamics in Iii-V Semiconductors Grown by Molecular-Beam Epitaxy At Very Low Substrate Temperatures

IEEE Journal of Quantum Electronics

Volumn 28, Issue 10, 1992, Pages 2464-2472

  Gupta, Shantanu ^a   Whitaker, John F ^a   Mourou, Gerard A ^a  

^a UNIVERSITY OF MICHIGAN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS;

ULTRAFAST CARRIER DYNAMICS;

ULTRAFAST PHENOMENA;

EID: 0026940099     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.159553     Document Type: Article

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