Far-Infrared Light Generation At Semiconductor Surfaces and Its Spectroscopic Applications

IEEE Journal of Quantum Electronics

Volumn 28, Issue 10, 1992, Pages 2302-2312

  Greene, B I ^a   Saeta, P N ^a   Dykaar, Douglas R ^a   Schmitt Rink, S ^b   Chuang, Shun Lien ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b PHILIPPS UNIVERSITY MARBURG   (Germany)

^c UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; INFRARED SPECTROSCOPY; SEMICONDUCTOR LASERS; ULTRAFAST PHENOMENA;

FAR INFRARED RADIATION; FEMTOSECOND PULSES;

LASER PULSES;

EID: 0026939484     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.159537     Document Type: Article

References (40)

1. X.-C. Zhang, B. B. Hu, J. T. Darrow, and D. H. Auston, “Generation of femtosecond electromagnetic pulses from semiconductor surfaces,” Appl. Phys. Lett., vol. 56, pp. 1011–1013, 1990.
2. S. L. Chuang, S. Schmitt-Rink, B. I. Greene, P. N. Saeta, and A. F. J. Levi, “Optical rectification at semiconductor surfaces,” Phys. Rev. Lett., vol. 68, pp. 102–105, 1992.
3. B. I. Greene, J. F. Federici, D. R. Dykaar, A. F. J. Levi, and L. Pfeiffer, “Picosecond pump and probe spectroscopy utilizing freely propagating terahertz radiation,” Opt. Lett., vol. 16, pp. 48–49, 1991.
4. B. I. Greene, J. F. Federici, D. R. Dykaar, R. R. Jones, and P. H. Bucksbaum, “Interferometric characterization of 160 fs far-infrared pulses,” Appl. Phys. Lett., vol. 59, pp. 893–985, 1991.
5. X.-C. Zhang and D. H. Auston, “Optoelectronic measurement of semiconductor surfaces and interfaces with femtosecond optics,” J. Appl. Phys., vol. 71, pp. 326–338, 1992.
6. I. B. Levinson, “Translational invariance in uniform fields and the equation for the density matrix in the Wigner representation,” Zh. Eksp. Teor. Fiz., vol. 57, pp. 660–672, 1969.
7. R. G. DeVoe and R. G. Brewer, “Experimental test of the optical Bloch equations for solids,” Phys. Rev. Lett., vol. 50, pp. 1269–1272, 1983.
8. B. B. Hu, X.-C. Zhang, and D. H. Auston, “Terahertz radiation induced by subband-gap femtosecond optical excitation of GaAs,” Phys Rev. Lett., vol. 67, pp. 2709–2712, 1991.
9. G. C. Cho, W. Kütt, and H. Kurz, “Subpicosecond time-resolved coherent phonon oscillations in GaAs,” Phys. Rev. Lett., vol. 65, pp. 764–766, 1990; and private communication.
10. A. E. Iverson, G. M. Wysin, D. L. Smith, and A. Redondo, “Over-shoot in the response of a photoconductor excited by subpicosecond pulses,” Appl. Phys. Lett., vol. 52, pp. 2148–2150, 1988.
11. K. Leo, J. Shah, E. O. Göbel, T. C. Damen, S. Schmitt-Rink, W. Schafer, and K. Köhler, “Coherent oscillations of a wave packet in a semiconductor double-quantum-well structure,” Phys. Rev. Lett., vol. 66, pp. 201–204, 1991; H. G. Roskos, M. C. Nuss, J. Shah, K. Leo, D. A. B. Miller, A. M. Fox, S. Schmitt-Rink, and K. Koehler, “Coherent submillimeter-wave emission from charge oscillations in a double-well potential,” Phys. Rev. Lett., vol. 68, pp. 2216–2219, 1992.
12. M. Yamanishi, “Field-induced optical nonlinearity due to virtual transitions in semiconductor quantum-well structures,” Phys. Rev. Lett., vol. 59, pp. 1014–1017, 1987; D. S. Chemla, D. A. B. Miller, and S. Schmitt-Rink, “Generation of ultrashort electrical pulses through screening by virtual populations in biased quantum wells,” Phys. Rev. Lett., vol. 59, pp. 1018–1021, 1987; E. Yablonovitch, J. P. Heritage, D. E. Aspnes, and Y. Yafet, “Virtual photoconductivity,” Phys. Rev. Lett., vol. 63, pp. 976–979, 1989; Y. Yafet and E. Yablonovitch, “Virtual photoconductivity due to intense optical radiation transmitted through a semiconductor,” Phys. Rev. B, vol. 43, pp. 12480–12489, 1991.
13. N. Bloembergen, Nonlinear Optics. New York: Benjamin, 1965.
14. H. W. K. Tom, T. F. Heinz, and Y. R. Shen, “Second-harmonic reflection from silicon surfaces and its relation to structural symmetry,” Phys. Rev. Lett., vol. 51, pp. 1983–1986, 1983.
15. N. Bloembergen, R. K. Chang, S. S. Jha, and C. H. Lee, “Optical second-harmonic generation in reflection from media with inversion symmetry,” Phys. Rev., vol. 174, pp. 813–822, 1968.
16. D. H. Martin and E. Puplett, “Polarised interferometric spectrometry for the millimetre and submillimetre spectrum,” Infrared Phys., vol. 10, pp. 105–109, 1969.
17. W. G. Chambers, T. J. Parker, and A. E. Costley, “Freestanding fine-wire grids for use in millimeter- and submillimeter-wave spectroscopy,” in Infrared and Millimeter Waves, K. J. Button, Ed. New York: Academic, 1985, vol. 16, ch. 3.
18. J. T. Darrow, B. B. Hu, X.-C. Zhang, and D. H. Auston, “Subpicosecond electromagnetic pulses from large-aperture photoconducting antennas,” Opt. Lett., vol. 15, pp. 323–325, 1990.
19. L. N. Hadley and D. M. Dennison, “Reflection and transmission interference filters,” J. Opt. Soc. Amer., vol. 37, pp. 451–456, 1947.
20. J. F. Federici, B. I. Greene, P. N. Saeta, D. R. Dykaar, F. Sharifi, and R. C. Dynes, “Direct picosecond measurement of photo-induced Cooper pair breaking in lead,” Phys. Rev. B, to be published.
21. P. N. Saeta, J. F. Federici, B. I. Greene, and D. R. Dykaar, “Intervalley scattering in GaAs and InP probed by pulsed far-infrared transmission spectroscopy,” Appl. Phys. Lett., vol. 60, pp. 1477–1479, 1992.
22. R. E. Glover, III and M. Tinkham, “Conductivity of superconducting films for photon energies between 0.3 and 40 kTc,” Phys. Rev., vol. 108, pp. 243–256, 1957.
23. W. J. Gallagher, C.-C. Chi, I. N. Duling, III, D. Grischkowsky, N. J. Halas, M. B. Ketchen, and A. W. Kleinsasser, “Subpicosecond optoelectronic study of resistive and superconductive transmission lines,” Appl. Phys. Lett., vol. 50, 350–352, 1987.
24. M. C. Nuss and K. W. Goossen, “Investigation of high-temperature superconductors with terahertz bandwidth electrical pulses,” IEEE J. Quantum Electron., vol. 25, pp. 2596–2607, 1989.
25. J. F. Whitaker, R. Sobolewski, D. R. Dykaar, T. Y. Hsiang, and G. A. Mourou, “Propagation model for ultrafast signals on superconducting dispersive striplines,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 277–284, 1988.
26. D. C. Mattis and J. Bardeen, “Theory of the anomalous skin effect in normal and superconducting metals,” Phys. Rev., vol. III, pp. 412–417, 1958.
27. L. Leplae, “Derivation of an expression for the conductivity of superconductors in terms of the normal-state conductivity,” Phys. Rev. B., vol. 27, pp. 1911–1912, 1983.
28. Electron States and Fermi Surfaces of Elements, A. P. Cracknell, Ed. Berlin: Springer-Verlag, 1984, vol. 13c.
29. S. B. Kaplan, C. C. Chi, D. N. Langenberg, J. J. Chang, S. Jafarey, and D. J. Scalapino, “Quasiparticle and phonon lifetimes in superconductors,” Phys. Rev. B., vol. 14, pp. 4854–4873, 1976.
30. B. J. C. van der Hoeven, Jr. and P. H. Keesom, “Specific heat of lead and lead alloys between 0.4 and 4.2 K,” Phys. Rev., vol. 137, pp. A103-A107, 1965.
31. J. Shah, B. Deveaud, T. C. Damen, W. T. Tsang, A. C. Gossard, and P. Lugli, “Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy,” Phys. Rev. Lett., vol. 59, pp. 2222–2225, 1987.
32. P. C. Becker, H. L. Fragnito, C. H. Brito Cruz, J. Shah, R. L. Fork, J. E. Cunningham, J. E. Henry, and C. V. Shank, “Femtosecond intervalley scattering in GaAs,” Appl. Phys. Lett., vol. 53, pp. 2089–90, 1988.
33. M. C. Nuss, D. H. Auston, and F. Capasso, “Direct subpicosecond measurement of carrier mobility of photoexcited electrons in gallium arsenide,” Phys. Rev. Lett., vol. 58, pp. 2355–2358, 1987.
34. W.-Z. Lin, R. W. Schoenlein, J. G. Fujimoto, and E. P. Ippen, “Femtosecond absorption saturation studies of hot carriers in GaAs and AlGaAs,” IEEE J. Quantum Electron., vol. 24, pp. 267–275, 1988.
35. M. A. Osman, M. J. Kann, D. K. Ferry, and P. Lugli,“Monte Carlo investigation of hot photoexcited electron relaxation in GaAs,” in Picosecond Electronics and Optoelectronics II, F. J. Leonberger, C. H. Lee, F. Capasso, and H. Morkoc, Eds. Berlin: Springer-Verlag, 1987, pp. 82–85.
36. The importance of electron cooling rates on the net L-Γ transfer time has recently been emphasized in C. J. Stanton and D. W. Bailey, “Rate equations for the study of femtosecond intervalley scattering in compound semiconductors,” Phys. Rev. B., vol. 45, pp. 8369–8377, 1992.
37. J. A. Kash, J. C. Tsang, and J. M. Hvam, “Subpicosecond time-resolved Raman spectroscopy of LO phonons in GaAs,” Phys. Rev. Lett., vol. 54, pp. 2151–2154, 1985.
38. M. van Exter and D. Grischkowsky, “Optical and electronic properties of doped silicon from 0.1 to 2 THz,” Appl. Phys. Lett., vol. 56, pp. 1694–1696, 1990.
39. M. Born and E. Wolf, Principles of Optics. Oxford: Pergamon, 1980.
40. Physics of Group IV Elements and III-V Compounds, O. Madelung, Ed. Berlin: Springer-Verlag, 1982, vol. 17a.