Generation of Single Femtosecond Pulses by Hybrid mode Locking of a Semiconductor Laser

IEEE Journal of Quantum Electronics

Volumn 28, Issue 10, 1992, Pages 2220-2229

  Weber, Andreas G ^a   Schell, Martin ^a   Fischbeck, Goetz ^a   Bimberg, Dieter ^a  

^a TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

LASER MODE LOCKING; LASER PULSES; ULTRAFAST PHENOMENA;

FEMTOSECOND PULSES; SUBPICOSECOND PULSES;

SEMICONDUCTOR LASERS;

EID: 0026938758     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.159529     Document Type: Article

References (24)

1. Y. K. Chen, M. C. Wu, T. Tanbun-Ek, R. A. Logan, and M. A. Chin, “Subpicosecond monolithic colliding-pulse mode-locked multiple quantum well laser,” Appl. Phys. Lett., vol. 58, pp. 1253–1255, 1991.
2. L. F. Mollenhauer and K. Smith, “Demonstration of soliton transmission over more than 4000 km in fiber with loss compensated by Raman gain,” presented at the OSA Annual Meet., 1988, paper MW1.
3. D. Bimberg, K. Ketterer, E. H. Böttcher, and E. Scholl, “Gain modulation of unbiased semiconductor lasers: ultrashort light-pulse generation in the 0,8 μm-1.3 μm wavelength range,” Int. J. Electron. vol. 60, pp. 23–45, 1986.
4. A. G. Weber, E. H. Böttcher, and D. Bimberg, “Substructure in short optical pulses from gain-switched semiconductor lasers,” Appl. Phys. Lett., vol. 55, pp. 1600–1602, 1989.
5. J. P. van der Ziel, in Semiconductor and Semimetals, W. T. Tsang, Ed. Orlando, FL: Academic, 1985, vol. 22, part B, p. 1.
6. E. H. Böttcher, D. Kuhl, F. Hieronymi, E. Dröge, T. Wolf, and D. Bimberg, “Ultrafast seminsulating InP : Fe/InGaAs : Fe/InP: Fe MSM photodectors: Modeling and performance,” IEEE J. Quantum Electron., this issue, pp. 2343–2357.
7. D. Kuhl, F. Hieronymi, E. H. Böttcher, T. Wolf, D. Bimberg, J. Kuhl, and M. Klingenstein, “Influence of space charges on the impulse response of InGaAs metal-semiconductor-metal photodetectors,” J. Lightwave Technol., vol. 10, pp. 753–759, June 1992.
8. P. A. Morton and J. E. Bowers, “Monolithic hybrid mode-locked 1,3 μm semiconductor lasers,” Appl. Phys. Lett., vol. 56, pp. 111–113, 1990.
9. M. Schell, A. G. Weber, E. Schöll, and D. Bimberg, “Fundamental limits of sub-ps pulse generation by active mode locking of semiconductor lasers: The spectral gain width and the facet reflectivities,” IEEE J. Quantum Electron., vol. 2, pp. 1661–1668, 1991.
10. J. E. Bowers, P. A. Morton, A. Mar, and S. W. Corzine, “Actively mode-locked semiconductor lasers,” IEEE J. Quantum Electron., vol. 25, pp. 1426–1439, 1989.
11. E. Pawlowski, “In situ reflection-wideband-monitoring-system for the analysis of optical coatings,” Proc., Trends and New Applications in This Films, TATF, 1991.
12. J. P. van der Ziel, R. A. Logan, and R. M. Mikulyak, “Generation of subpicosecond pulses from an actively mode locked GaAs laser in an external ring cavity,” Appl. Phys. Lett., vol. 39, pp. 867–869, 1981.
13. U. A. Matter and H. Melchior, “Picosecond high power pulse generation by actively mode-locked two section semiconductor lasers,” Conf. Dig., 12th IEEE Int. Semicond. Laser Conf., Davos, Switzerland, 1990.
14. A. G. Weber, W. Ronghan, E. H. Böttcher, M. Schell, and D. Bimberg, “Measurement and simulation of the turn-on delay time jitter in gain switched semiconductor lasers,” IEEE J. Quantum Electron., vol. 28, pp. 441–446, Feb. 1992.
15. H. Haug, “Quantum mechanical rate equations for semiconductor lasers,” Phys. Rev., vol. 184/2, p. 338, 1969.
16. M. Schell, A. G. Weber, E. H. Böttcher, E. Schöll, and D. Bimberg, “Theory of sub-ps pulse generation by active mode-locking of a semiconductor laser amplifier in an external cavity: Limits for the pulsewidth,” IEEE J. Quantum Electron., vol. 27, pp. 402–409, Mar. 1991.
17. M. Schell and E. Scholl, “Time dependent simulation of a semiconductor laser amplifier: Pulse compression in a ring configuration and dynamic optical bistability,” IEEE J. Quantum Electron., vol. 26, pp. 1005–1013, 1990.
18. J. P. van der Ziel and R. A. Logan, “Dispersion of the group velocity refractive index in GaAs double heterostructure lasers,” IEEE J. Quantum Electron., vol. QE-19, pp. 164–169, 1983.
19. H. Nishimoto, M. Yamaguchi, I. Mito, and K. Kobayashi, “High frequency response for DFB LD due to a wavelength detuning effect,” J. Lightwave Technol., vol. LT-5, pp. 1399–1402, 1987.
20. D. J. Derickson, P. A. Morton, J. E. Bowers, and R. L. Thornton, “Comparison of timing jitter in external and monolithic cavity mode-locked semiconductor laser,” Appl. Phys. Lett., vol. 59, pp. 3372–3374, 1991.
21. H. A. Haus, “Theory of modelocking with a slow saturable absorber,” IEEE J. Quantum Electron., vol. QE-11, pp. 736–46, Sept. 1975.
22. J. P. Van der Ziel, “Modelocking of semiconductor lasers,” in Semiconductors and Semimetals, vol. 22B, W. T. Tsang, Ed. Orlando, FL: Academic, 1985, pp. 1–68.
23. A. B. Zhuravlev, U. A. Marushchak, E. L. Portnoi, N. M. Stel’makh, and A. N. Titkov, “Lifetime of nonequilibrium carriers in p-type GaAs irradiated with oxygen ions,” Sov. Phys. Semicond., vol 22, no. 2, pp. 217–218, 1988.
24. K. Hall, J. Mark, E. P. Ippen, and G. Eisenstein, “Femtosecond gain dynamics in InGaAsP optical amplifiers,” Appl. Phys. Lett., vol. 56, pp. 1740–2, 1990.