-
1
-
-
0022010421
-
Ultra-high speed semiconductor lasers
-
K. Y. Lau and A. Yariv, “Ultra-high speed semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-21, pp. 121–138, 1985.
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, pp. 121-138
-
-
Lau, K.Y.1
Yariv, A.2
-
2
-
-
0022734409
-
High-speed InGaAsP constricted-mesa lasers
-
J. E. Bowers, B. R. Hemenway, A. H. Gnauck, and D. P. Wilt, “High-speed InGaAsP constricted-mesa lasers,” IEEE J. Quantum Electron., vol. QE-22, pp. 833–844, 1986.
-
(1986)
IEEE J. Quantum Electron.
, vol.QE-22
, pp. 833-844
-
-
Bowers, J.E.1
Hemenway, B.R.2
Gnauck, A.H.3
Wilt, D.P.4
-
3
-
-
0342692875
-
Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing-wave-induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasers
-
J. Eom and C. B. Su, “Observation of positive and negative nonlinear gain in an optical injection experiment: Proof of the cavity standing-wave-induced nonlinear gain theory in 1.3 μm wavelength semiconductor diode lasers,” Appl. Phys. Lett., vol. 54, pp. 1734–1736, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.54
, pp. 1734-1736
-
-
Eom, J.1
Su, C.B.2
-
4
-
-
0019552980
-
Analysis of gain suppression in undoped injection lasers
-
M. Yamada and Y. Suematsu, “Analysis of gain suppression in undoped injection lasers,” J. Appl. Phys., vol. 52, pp. 2653–2664, 1981.
-
(1981)
J. Appl. Phys.
, vol.52
, pp. 2653-2664
-
-
Yamada, M.1
Suematsu, Y.2
-
5
-
-
0023363777
-
Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers
-
G. P. Agrawal, “Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers,” IEEE J. Quantum Electron., vol. QE-23, pp. 860–868, 1987.
-
(1987)
IEEE J. Quantum Electron.
, vol.QE-23
, pp. 860-868
-
-
Agrawal, G.P.1
-
6
-
-
0012041856
-
Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor laser
-
K. Uomi, T. Tsuchiya, M. Aoki, and N. Chinone, “Oscillation wavelength and laser structure dependence of nonlinear damping effect in semiconductor laser,” Appl. Phys. Lett., vol. 58, pp. 675–677, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 675-677
-
-
Uomi, K.1
Tsuchiya, T.2
Aoki, M.3
Chinone, N.4
-
7
-
-
0009057247
-
Subpicosecond gain dynamics in GaAlAs Laser diodes
-
M. P. Kesler and E. P. Ippen, “Subpicosecond gain dynamics in GaAlAs Laser diodes,” Appl. Phys. Lett., vol. 51, pp. 1765–1767, 1987.
-
(1987)
Appl. Phys. Lett.
, vol.51
, pp. 1765-1767
-
-
Kesler, M.P.1
Ippen, E.P.2
-
8
-
-
0025503028
-
Theory of hot carrier effects on nonlinear gain in GaAs-AlGaAs lasers and amplifiers
-
B. Gomatam and A. P. DeFonzo, “Theory of hot carrier effects on nonlinear gain in GaAs-AlGaAs lasers and amplifiers,” IEEE J. Quantum Electron., vol. 26, pp. 1689–1704, 1990.
-
(1990)
IEEE J. Quantum Electron.
, vol.26
, pp. 1689-1704
-
-
Gomatam, B.1
DeFonzo, A.P.2
-
9
-
-
0026188774
-
Nonlinear gain suppression in semiconductor lasers due to carrier heating
-
M. Willatzen, A. Uskov, J. Mørk, H. Olessen, B. Tromborg, and A.-P. Jauho, “Nonlinear gain suppression in semiconductor lasers due to carrier heating,” IEEE Photon. Technol. Lett., vol. 3, pp. 606–609, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 606-609
-
-
Willatzen, M.1
Uskov, A.2
Mørk, J.3
Olessen, H.4
Tromborg, B.5
Jauho, A.-P.6
-
10
-
-
84941432651
-
Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers
-
R. Olshansky, P. Hill, V. Lanzisera, and W. Powazinik, “Frequency response of 1.3 μm InGaAsP high speed semiconductor lasers,” IEEE J. Quantum Electron., vol. QE-23, pp. 1410–1418, 1987.
-
(1987)
IEEE J. Quantum Electron.
, vol.QE-23
, pp. 1410-1418
-
-
Olshansky, R.1
Hill, P.2
Lanzisera, V.3
Powazinik, W.4
-
11
-
-
0026204561
-
Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping
-
T. Fukushima, R. Nagarajan, J. E. Bowers, R. A. Logan, and T. Tanbun-Ek, “Relative intensity noise reduction in InGaAs/InP multiple quantum well lasers with low nonlinear damping,” IEEE Photon. Technol. Lett., vol. 3, pp. 691–693, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 691-693
-
-
Fukushima, T.1
Nagarajan, R.2
Bowers, J.E.3
Logan, R.A.4
Tanbun-Ek, T.5
-
12
-
-
0021634326
-
Effects of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers
-
C. B. Su and V. Lanzisera, “Effects of doping level on the gain constant and modulation bandwidth of InGaAsP semiconductor lasers,” Appl. Phys. Lett., vol. 45, pp. 1302–1304, 1984.
-
(1984)
Appl. Phys. Lett.
, vol.45
, pp. 1302-1304
-
-
Su, C.B.1
Lanzisera, V.2
-
13
-
-
0026173290
-
High-speed and low-relative-intensity noise 1.3 μm InGaAsP semiinsulating buried crescent laser
-
W.-H. Cheng, K.-D. Buehring, A. Appelbaum, D. Renner, S. Chin, C. B. Su, A. Mar, and J. E. Bowers, “High-speed and low-relative-intensity noise 1.3 μm InGaAsP semiinsulating buried crescent laser,” IEEE J. Quantum Electron., vol. 27, pp. 1642–1647, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1642-1647
-
-
Cheng, W.-H.1
Buehring, K.-D.2
Appelbaum, A.3
Renner, D.4
Chin, S.5
Su, C.B.6
Mar, A.7
Bowers, J.E.8
-
14
-
-
0000748005
-
Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects
-
S. W. Corzine, R. H. Yan, and L. A. Coldren, “Theoretical gain in strained InGaAs/AlGaAs quantum wells including valence-band mixing effects,” Appl. Phys. Lett., vol. 57, pp. 2835–2837, 1990.
-
(1990)
Appl. Phys. Lett.
, vol.57
, pp. 2835-2837
-
-
Corzine, S.W.1
Yan, R.H.2
Coldren, L.A.3
-
15
-
-
0026155016
-
Theoretical study of differential gain in strained quantum well structures
-
I. Suemune, “Theoretical study of differential gain in strained quantum well structures,” IEEE J. Quantum Electron., vol. 27, pp. 1149–1159, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1149-1159
-
-
Suemune, I.1
-
16
-
-
0006443982
-
Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers
-
L. F. Lester, S. D. Offsey, B. K. Ridley, W. J. Schaff, B. A. Foreman, and L. F. Eastman, “Comparison of the theoretical and experimental differential gain in strained layer InGaAs/GaAs quantum well lasers,” Appl. Phys. Lett., vol. 59, pp. 1162–1164, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 1162-1164
-
-
Lester, L.F.1
Offsey, S.D.2
Ridley, B.K.3
Schaff, W.J.4
Foreman, B.A.5
Eastman, L.F.6
-
17
-
-
0025263494
-
Modulation-doped multi-quantum well (MDMQ) lasers. II. Experiment
-
K. Uomi, T. Mishima, and N. Chinone “Modulation-doped multi-quantum well (MDMQ) lasers. II. Experiment,” Japan. J. Appl. Phys., vol. 29, pp. 88–94, 1990.
-
(1990)
Japan. J. Appl. Phys.
, vol.29
, pp. 88-94
-
-
Uomi, K.1
Mishima, T.2
Chinone, N.3
-
18
-
-
36549097092
-
Extremely wide modulation bandwidth in a low threshold current strained quantum well laser
-
I. Suemune, L. A. Coldren, M. Yamanishi, and Y. Kan, “Extremely wide modulation bandwidth in a low threshold current strained quantum well laser,” Appl. Phys. Lett., vol. 53, pp. 1378–1380, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.53
, pp. 1378-1380
-
-
Suemune, I.1
Coldren, L.A.2
Yamanishi, M.3
Kan, Y.4
-
19
-
-
33745156505
-
High-speed InGaAs/GaAs strained multiple quantum well lasers with low damping
-
R. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “High-speed InGaAs/GaAs strained multiple quantum well lasers with low damping,” Appl. Phys. Lett., vol. 58, pp. 2326–2328, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2326-2328
-
-
Nagarajan, R.1
Fukushima, T.2
Bowers, J.E.3
Geels, R.S.4
Coldren, L.A.5
-
20
-
-
2342658387
-
High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers
-
See also L. F. Lester, W. J. Schaff, X. Song, and L. F. Eastman, “Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 1049–1051, 1991
-
S. D. Offsey, L. F. Lester, W. J. Schaff, and L. F. Eastman, “High-speed modulation of strained-layer InGaAs-GaAs-AlGaAs ridge waveguide multiple quantum well lasers,” Appl. Phys. Lett., vol. 58, pp. 2336–2338, 1991; See also L. F. Lester, W. J. Schaff, X. Song, and L. F. Eastman, “Optical and RF characteristics of short-cavity-length multiquantum-well strained-layer lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 1049–1051, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 2336-2338
-
-
Offsey, S.D.1
Lester, L.F.2
Schaff, W.J.3
Eastman, L.F.4
-
21
-
-
84945714341
-
10 GBit/s direct modulation of GaAs/AlGaAs multiple-quantum-well ridge-waveguide lasers at temperatures up to 100°C
-
H. Lang, H. Hedrich, C. Hoyler, C. Thanner, and H. D. Wolf, “10 GBit/s direct modulation of GaAs/AlGaAs multiple-quantum-well ridge-waveguide lasers at temperatures up to 100°C,” in Proc. ECOC/IOOC ‘91, 1991, p. 205.
-
(1991)
Proc. ECOC/IOOC ‘91
, pp. 205
-
-
Lang, H.1
Hedrich, H.2
Hoyler, C.3
Thanner, C.4
Wolf, H.D.5
-
22
-
-
0026420460
-
Extremely reduced nonlinear K-factor in high-speed strained layer multiquantum well DFB lasers
-
Y. Hirayama, M. Morinaga, N. Suzuki, and M. Nakamura, “Extremely reduced nonlinear K-factor in high-speed strained layer multiquantum well DFB lasers,” Electron. Lett., vol. 27, pp. 875–876, 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 875-876
-
-
Hirayama, Y.1
Morinaga, M.2
Suzuki, N.3
Nakamura, M.4
-
23
-
-
0026171846
-
Wide bandwidth multiple quantum well 1.55 pm lasers
-
L. F. Lealman, M. Bagley, D. M. Cooper, N. Fletcher, M. Harlow, S. D. Perrin, R. H. Walling, and L. D. Westbrook, “Wide bandwidth multiple quantum well 1.55 pm lasers,” Electron. Lett., vol. 27, pp. 1191–1193, 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 1191-1193
-
-
Lealman, L.F.1
Bagley, M.2
Cooper, D.M.3
Fletcher, N.4
Harlow, M.5
Perrin, S.D.6
Walling, R.H.7
Westbrook, L.D.8
-
24
-
-
0000448753
-
Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers
-
T. Fukushima, J. E. Bowers, R. A. Logan, T. Tanbun-Ek, and H. Temkin, “Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers,” Appl. Phys. Lett., vol. 58, pp. 1244–1246, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 1244-1246
-
-
Fukushima, T.1
Bowers, J.E.2
Logan, R.A.3
Tanbun-Ek, T.4
Temkin, H.5
-
25
-
-
0026124073
-
Anomalously high damping in strained InGaAs-GaAs single quantum well laser
-
W. F. Sharfin, J. Schlafer, W. Rideout, B. Elman, R. B. Lauer, J. LaCourse, and F. D. Crawford, “Anomalously high damping in strained InGaAs-GaAs single quantum well laser,” IEEE Photon. Technol. Lett., vol. 3, pp. 193–195, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 193-195
-
-
Sharfin, W.F.1
Schlafer, J.2
Rideout, W.3
Elman, B.4
Lauer, R.B.5
LaCourse, J.6
Crawford, F.D.7
-
26
-
-
0026418115
-
Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and low damping
-
R. Nagarajan, T. Fukushima, J. E. Bowers, R. S. Geels, and L. A. Coldren, “Single quantum well strained InGaAs/GaAs lasers with large modulation bandwidth and low damping,” Electron. Lett., vol. 27, pp. 1058–1059, 1991.
-
(1991)
Electron. Lett.
, vol.27
, pp. 1058-1059
-
-
Nagarajan, R.1
Fukushima, T.2
Bowers, J.E.3
Geels, R.S.4
Coldren, L.A.5
-
27
-
-
0026222562
-
Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 μm InGaAs/InGaAsP MQW and strained-MQW lasers
-
J. Shimizu, H. Yamada, S. Murata, A. Tomita, M. Kitamura, and A. Suzuki, “Optical-confinement-factor dependencies of the K factor, differential gain, and nonlinear gain coefficient for 1.55 μm InGaAs/InGaAsP MQW and strained-MQW lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 773–776, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 773-776
-
-
Shimizu, J.1
Yamada, H.2
Murata, S.3
Tomita, A.4
Kitamura, M.5
Suzuki, A.6
-
28
-
-
0026169156
-
Nonlinear gain effects in quantum well, quantum well wire, and quantum well box laser
-
T. Takahashi and Y. Arakawa, ‘Nonlinear gain effects in quantum well, quantum well wire, and quantum well box laser,” IEEE J. Quantum Electron., vol. 27, pp. 1824–1829, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1824-1829
-
-
Takahashi, T.1
Arakawa, Y.2
-
29
-
-
0025703367
-
Nonlinear gain effects in strained-layer lasers
-
A. Ghiti and E. P. O’Reilly, ‘Nonlinear gain effects in strained-layer lasers,” Electron. Lett., vol. 26, pp. 1978–1980, 1990.
-
(1990)
Electron. Lett.
, vol.26
, pp. 1978-1980
-
-
Ghiti, A.1
O'Reilly, E.P.2
-
30
-
-
0024719422
-
Proposal on reducing the damping constant in semiconductor lasers by using quantum well structures
-
K. Uomi and N. Chinone, “Proposal on reducing the damping constant in semiconductor lasers by using quantum well structures,” Japan. J. of Appl. Phys., vol. 28, pp. L1424-L1425, 1989.
-
(1989)
Japan. J. of Appl. Phys.
, vol.28
, pp. L1424-L1425
-
-
Uomi, K.1
Chinone, N.2
-
31
-
-
0026222748
-
Well-barrier hole burning in quantum well lasers
-
W. Rideout, W. F. Sharfin, E. S. Koteles, M. O. Vassell, and B. Elman, ‘Well-barrier hole burning in quantum well lasers,” IEEE Photon. Technol. Lett., vol. 3, pp. 784–786, 1991.
-
(1991)
IEEE Photon. Technol. Lett.
, vol.3
, pp. 784-786
-
-
Rideout, W.1
Sharfin, W.F.2
Koteles, E.S.3
Vassell, M.O.4
Elman, B.5
-
32
-
-
0001001411
-
Effects of carrier transport on high-speed quantum well lasers
-
R. Nagarajan, T. Fukushima, S. W. Corzine, and J. E. Bowers, ‘Effects of carrier transport on high-speed quantum well lasers,” Appl. Phys. Lett., vol. 59, pp. 1835–1837, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 1835-1837
-
-
Nagarajan, R.1
Fukushima, T.2
Corzine, S.W.3
Bowers, J.E.4
-
33
-
-
84941454345
-
Effect of carrier transport on modulation bandwidth of quantum well lasers, ” in
-
W. F. Sharfin, W. Rideout, E. Koteles, J. Schlafer, B. Elman, M. Vassell, D. Crawford, J. Benoit, P. Brosson, and B. Femier, ‘Effect of carrier transport on modulation bandwidth of quantum well lasers,” in Proc. 17th ECOC/8th IOOC ‘91, 1991, p. 133.
-
(1991)
Proc. 17th ECOC/8th IOOC ‘91
, pp. 133
-
-
Sharfin, W.F.1
Rideout, W.2
Koteles, E.3
Schlafer, J.4
Elman, B.5
Vassell, M.6
Crawford, D.7
Benoit, J.8
Brosson, P.9
Femier, B.10
-
34
-
-
0026818117
-
Transport limits in high speed quantum well lasers: Experiment and theory
-
R. Nagarajan, T. Fukushima, M. Ishikawa, J. E. Bowers, R. S. Geels, and L. A. Coldren, “Transport limits in high speed quantum well lasers: Experiment and theory,” IEEE Photon. Technol. Lett., vol. 4, pp. 121–123, 1992.
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, pp. 121-123
-
-
Nagarajan, R.1
Fukushima, T.2
Ishikawa, M.3
Bowers, J.E.4
Geels, R.S.5
Coldren, L.A.6
-
35
-
-
0012675315
-
Trapping of carriers in single quantum wells with different configuration of the confinement layers
-
H.-J. Polland, K. Leo, K. Rother, K. Ploog, J. Feldman, G. Peter, and E. O. Gobel, “Trapping of carriers in single quantum wells with different configuration of the confinement layers,” Phys. Rev., vol. B 38, pp. 7635–7648, 1988.
-
(1988)
Phys. Rev.
, vol.B 38
, pp. 7635-7648
-
-
Polland, H.-J.1
Leo, K.2
Rother, K.3
Ploog, K.4
Feldman, J.5
Peter, G.6
Gobel, E.O.7
-
36
-
-
0026173289
-
Capture of photoexcited carriers in a single quantum well with different confinement structures
-
S. Morin, B. Deveaud, F. Clerot, K. Fujiwara, and K. Mitsunaga, “Capture of photoexcited carriers in a single quantum well with different confinement structures,” IEEE J. Quantum Electron., vol. 27, pp. 1669–1675, 1991.
-
(1991)
IEEE J. Quantum Electron.
, vol.27
, pp. 1669-1675
-
-
Morin, S.1
Deveaud, B.2
Clerot, F.3
Fujiwara, K.4
Mitsunaga, K.5
-
37
-
-
49749204850
-
P+IN+ silicon diodes at high forward current densities
-
N. R. Howard, and G. W. Johnson, “P+IN+ silicon diodes at high forward current densities,” Solid State Electron., vol. 8, pp. 275–284, 1965.
-
(1965)
Solid State Electron.
, vol.8
, pp. 275-284
-
-
Howard, N.R.1
Johnson, G.W.2
-
38
-
-
4243975627
-
Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy
-
B. Deveaud, J. Shah, and T. C. Damen, “Bloch transport of electrons and holes in superlattice minibands: Direct measurement by subpicosecond luminescence spectroscopy,” Phys. Rev. Lett., vol. 58, pp. 2582–2585, 1987.
-
(1987)
Phys. Rev. Lett.
, vol.58
, pp. 2582-2585
-
-
Deveaud, B.1
Shah, J.2
Damen, T.C.3
-
39
-
-
0025662729
-
Measurement of the ambipolar carrier capture time in a GaAs/AlxGa1-xAs separate confinement heterostructure quantum well
-
P. W. M. Blom, R. F. Mols, J. E. M. Haverkort, M. R. Ley, and J. H. Wolter, “Measurement of the ambipolar carrier capture time in a GaAs/AlxGa1-xAs separate confinement heterostructure quantum well,” Superlattice Microstruc., vol. 7, pp. 319–321, 1990.
-
(1990)
Superlattice Microstruc.
, vol.7
, pp. 319-321
-
-
Blom, P.W.M.1
Mols, R.F.2
Haverkort, J.E.M.3
Ley, M.R.4
Wolter, J.H.5
-
41
-
-
0010246276
-
Ultrafast gain dynamics in 1.5 μm multiple quantum well optical amplifiers
-
G. Eisenstein, J. M. Wiesenfeld, M. Wegener, G. Sucha, D. S. Chemla, S. Weiss, G. Raybon, and U. Koren, “Ultrafast gain dynamics in 1.5 μm multiple quantum well optical amplifiers,” Appl. Phys. Lett., vol. 58, pp. 158–160, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.58
, pp. 158-160
-
-
Eisenstein, G.1
Wiesenfeld, J.M.2
Wegener, M.3
Sucha, G.4
Chemla, D.S.5
Weiss, S.6
Raybon, G.7
Koren, U.8
-
42
-
-
36449003339
-
Carrier capture times in 1.5 μm multiple quantum well optical amplifiers
-
S. Weiss, J. M. Wiesenfeld, D. S. Chemla, G. Raybon, G. Sucha, M. Wegener, G. Eisenstein, C. A. Burrus, A. G. Dentai, U. Koren, B. I. Miller, H. Temkin, R. A. Logan, and T. Tanbun-Ek, “Carrier capture times in 1.5 μm multiple quantum well optical amplifiers,” Appl. Phys. Lett., vol. 60, pp. 9–11, 1992.
-
(1992)
Appl. Phys. Lett.
, vol.60
, pp. 9-11
-
-
Weiss, S.1
Wiesenfeld, J.M.2
Chemla, D.S.3
Raybon, G.4
Sucha, G.5
Wegener, M.6
Eisenstein, G.7
Burrus, C.A.8
Dentai, A.G.9
Koren, U.10
Miller, B.I.11
Temkin, H.12
Logan, R.A.13
Tanbun-Ek, T.14
-
43
-
-
0020193772
-
Semiconducting and other major properties of gallium arsenide
-
J. S. Blakemore, “Semiconducting and other major properties of gallium arsenide,” J. Appl. Phys., vol. 53, pp. R123-R181, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. R123-R181
-
-
Blakemore, J.S.1
-
44
-
-
0000404735
-
Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy
-
J. Shah, B. Deveaud, T. C. Damen, W. T. Tsang, A. C. Gossard, and P. Lugli, “Determination of intervalley scattering rates in GaAs by subpicosecond luminescence spectroscopy,” Phys. Rev. Lett., vol. 59, pp. 2222–2225, 1987.
-
(1987)
Phys. Rev. Lett.
, vol.59
, pp. 2222-2225
-
-
Shah, J.1
Deveaud, B.2
Damen, T.C.3
Tsang, W.T.4
Gossard, A.C.5
Lugli, P.6
-
45
-
-
0000896552
-
Femtosecond carrier thermalization in dense fermi seas
-
W. H. Knox, D. S. Chemla, G. Livescu, J. E. Cunningham, and J. E. Henry, “Femtosecond carrier thermalization in dense fermi seas,” Phys. Rev. Lett., vol. 61, pp. 1290–1293, 1988.
-
(1988)
Phys. Rev. Lett.
, vol.61
, pp. 1290-1293
-
-
Knox, W.H.1
Chemla, D.S.2
Livescu, G.3
Cunningham, J.E.4
Henry, J.E.5
-
46
-
-
0018008616
-
Carrier collection in a semiconductor quantum well
-
H. Shichijo, R. M. Kolbas, N. Holonyak, Jr., R. D. Dupuis, and P. D. Dapkus, “Carrier collection in a semiconductor quantum well,” Solid State Commun., vol. 27, pp. 1029–1032, 1978.
-
(1978)
Solid State Commun.
, vol.27
, pp. 1029-1032
-
-
Shichijo, H.1
Kolbas, R.M.2
Holonyak, N.3
Dupuis, R.D.4
Dapkus, P.D.5
-
47
-
-
0020183148
-
The dynamics of electron-hole collection in quantum well heterostructures
-
J. Y. Tang, K. Hess, N. Holonyak, Jr., J. J. Coleman, and P. D. Dapkus, “The dynamics of electron-hole collection in quantum well heterostructures,” J. Appl. Phys., vol. 53, pp. 6043–6046, 1982.
-
(1982)
J. Appl. Phys.
, vol.53
, pp. 6043-6046
-
-
Tang, J.Y.1
Hess, K.2
Holonyak, N.3
Coleman, J.J.4
Dapkus, P.D.5
-
48
-
-
0001664554
-
Resonant carrier capture by semiconductor quantum wells
-
J. A. Brum and G. Bastard, “Resonant carrier capture by semiconductor quantum wells,” Phys. Rev., vol. B 33, pp. 1420–1423, 1986.
-
(1986)
Phys. Rev.
, vol.B 33
, pp. 1420-1423
-
-
Brum, J.A.1
Bastard, G.2
-
49
-
-
0005839222
-
Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructures
-
J. A. Brum, T. Weil, J. Nagle, and B. Vinter, “Calculation of carrier capture time of a quantum well in graded-index separate-confinement heterostructures,” Phys. Rev., vol. B 34, pp. 2381–2384, 1986.
-
(1986)
Phys. Rev.
, vol.B 34
, pp. 2381-2384
-
-
Brum, J.A.1
Weil, T.2
Nagle, J.3
Vinter, B.4
-
50
-
-
0022874159
-
Effective-mass eigenfunction in superlattices and their role in well-capture
-
M. Babiker and B. K. Ridley, “Effective-mass eigenfunction in superlattices and their role in well-capture,” Superlattice Microstruc., vol. 2, pp. 287–291, 1986.
-
(1986)
Superlattice Microstruc.
, vol.2
, pp. 287-291
-
-
Babiker, M.1
Ridley, B.K.2
-
51
-
-
36549098243
-
Capture of photoexcited carriers by a laser structure
-
B. Deveaud, F. Clérot, A. Regreny, K. Fujiwara, K. Mitsunaga, and J. Ohta, “Capture of photoexcited carriers by a laser structure,” Appl. Phys. Lett., vol. 55, pp. 2646–2648, 1989.
-
(1989)
Appl. Phys. Lett.
, vol.55
, pp. 2646-2648
-
-
Deveaud, B.1
Clérot, F.2
Regreny, A.3
Fujiwara, K.4
Mitsunaga, K.5
Ohta, J.6
-
52
-
-
0001693865
-
Thermionic emission and gaussian transport of holes in a GaAs/AlxGa1-xAs multiple-quantum-well structure
-
H. Schneider and K. v. Klitzing, “Thermionic emission and gaussian transport of holes in a GaAs/AlxGa1-xAs multiple-quantum-well structure,” Phys. Rev., vol. B 38, pp. 6160–6165, 1988.
-
(1988)
Phys. Rev.
, vol.B 38
, pp. 6160-6165
-
-
Schneider, H.1
Klitzing, K.V.2
-
53
-
-
0021478956
-
Some design considerations for multiquantum-well lasers
-
H. Kroemer and H. Okamoto, “Some design considerations for multiquantum-well lasers,” Japan. J. Appl. Phys., vol. 23, pp. 970–974, 1984.
-
(1984)
Japan. J. Appl. Phys.
, vol.23
, pp. 970-974
-
-
Kroemer, H.1
Okamoto, H.2
-
55
-
-
0013469296
-
Effect of collisions and relaxation on coherent resonant tunneling: Hole tunneling in GaAs/AlxGa1-xAs double-quantum-well structures
-
K. Leo, J. Shah, J. P. Gordon, T. C. Damen, D. A. B. Miller, C. W. Tu, and J. E. Cunningham, “Effect of collisions and relaxation on coherent resonant tunneling: Hole tunneling in GaAs/AlxGa1-xAs double-quantum-well structures,” Phys. Rev., vol. B 42, pp. 7065–7068, 1990.
-
(1990)
Phys. Rev.
, vol.B 42
, pp. 7065-7068
-
-
Leo, K.1
Shah, J.2
Gordon, J.P.3
Damen, T.C.4
Miller, D.A.B.5
Tu, C.W.6
Cunningham, J.E.7
-
56
-
-
0022151206
-
Measurement of FM Noise, AM Noise, and Field Spectra of 1.3 μm InGaAsP lasers and determination of the linewidth enhancement factor
-
K. Kikuchi and T. Okoshi, “Measurement of FM Noise, AM Noise, and Field Spectra of 1.3 μm InGaAsP lasers and determination of the linewidth enhancement factor,” IEEE J. Quantum Electron., vol. QE-21, pp. 1814–1818, 1985.
-
(1985)
IEEE J. Quantum Electron.
, vol.QE-21
, pp. 1814-1818
-
-
Kikuchi, K.1
Okoshi, T.2
-
58
-
-
0014750845
-
Activation energy of holes in Zn-doped GaAs
-
See also D. Kranzer, “Mobility of holes of zinc-blende III-V and II-VI compounds,” Phys. Stat. Sol., vol. a 26, pp. 11–52, 1974
-
D. E. Hill, “Activation energy of holes in Zn-doped GaAs,” J. Appl. Phys., vol. 41, pp. 1815–1818, 1970; See also D. Kranzer, “Mobility of holes of zinc-blende III-V and II-VI compounds,” Phys. Stat. Sol., vol. a 26, pp. 11–52, 1974.
-
(1970)
J. Appl. Phys.
, vol.41
, pp. 1815-1818
-
-
Hill, D.E.1
-
59
-
-
0001259201
-
Lattice mobility of holes in III-V compounds
-
See also J. D. Wiley, “Mobility of holes in III-V compounds,” in Semiconductor and Semimetals, R. K. Williardson and A. C. Beer, Eds. New York: Academic, 1975, pp. 91–174
-
J. D. Wiley and M. DiDomenico, Jr. “Lattice mobility of holes in III-V compounds,” Phys. Rev., vol. B 2, pp. 427–433, 1970; See also J. D. Wiley, “Mobility of holes in III-V compounds,” in Semiconductor and Semimetals, R. K. Williardson and A. C. Beer, Eds. New York: Academic, 1975, pp. 91–174.
-
(1970)
Phys. Rev.
, vol.B 2
, pp. 427-433
-
-
Wiley, J.D.1
DiDomenico, M.2
-
60
-
-
0020829781
-
Alloy scattering potential in p-type Ga1-xAlxAs
-
K. Masu, E. Tokumitsu, M. Konagi, and K. Takahashi, “Alloy scattering potential in p-type Ga1-xAlxAs,” J. Appl. Phys., vol. 54, pp. 5785–5792, 1983.
-
(1983)
J. Appl. Phys.
, vol.54
, pp. 5785-5792
-
-
Masu, K.1
Tokumitsu, E.2
Konagi, M.3
Takahashi, K.4
-
61
-
-
84945715659
-
Hole mobility in GaAs, temperature dependence
-
2nd ed. New York: INSPEC, IEE
-
A. R. Adams, “Hole mobility in GaAs, temperature dependence,” in EMIS Datareview Series No. 2: RN = 15457, 2nd ed. New York: INSPEC, IEE, 1990, p. 103.
-
(1990)
EMIS Datareview Series No. 2: RN = 15457
, pp. 103
-
-
Adams, A.R.1
-
62
-
-
0001135290
-
Electron transport in GaAs
-
See also D. L. Rhode, “Low field electron transport,” in Semiconductor and Semimetals, R. K. Williardson and A. C. Beer, Eds. New York: Academic, 1975, pp. 1–89
-
D. L. Rhode and S. Knight, “Electron transport in GaAs,” Phys. Rev., vol. B 3, pp. 2534–2541, 1971; See also D. L. Rhode, “Low field electron transport,” in Semiconductor and Semimetals, R. K. Williardson and A. C. Beer, Eds. New York: Academic, 1975, pp. 1–89.
-
(1971)
Phys. Rev.
, vol.B 3
, pp. 2534-2541
-
-
Rhode, D.L.1
Knight, S.2
-
63
-
-
0007536897
-
Transport properties of n-type metalorganic chemical-vapor-deposited AlxGa1-xAs (0 ≤ x ≤0.6)
-
P. K. Bhattacharya, U. Das, and M. J. Ludowise, “Transport properties of n-type metalorganic chemical-vapor-deposited AlxGa1-xAs (0 ≤ x ≤0.6),” Phys. Rev., vol. B 29, pp. 6623–6631, 1984.
-
(1984)
Phys. Rev.
, vol.B 29
, pp. 6623-6631
-
-
Bhattacharya, P.K.1
Das, U.2
Ludowise, M.J.3
-
64
-
-
0023670581
-
Ultrawide-band long-wavelength p-i-n photodetectors
-
J. E. Bowers and C. A. Burrus, “Ultrawide-band long-wavelength p-i-n photodetectors,” J. Lightwave Technol., vol. 5, pp. 1339–1350, 1987.
-
(1987)
J. Lightwave Technol.
, vol.5
, pp. 1339-1350
-
-
Bowers, J.E.1
Burrus, C.A.2
-
65
-
-
12344293172
-
Temperature dependence of damping in high speed quantum well lasers
-
July
-
M. Ishikawa, T. Fukushima, R. Nagarajan, and J. E. Bowers, “Temperature dependence of damping in high speed quantum well lasers,” Appl. Phys. Lett., July 1992.
-
(1992)
Appl. Phys. Lett.
-
-
Ishikawa, M.1
Fukushima, T.2
Nagarajan, R.3
Bowers, J.E.4
-
66
-
-
84945714506
-
Design of quantum well lasers for high differential gain
-
L. F. Lester, D. Teng, W. J. Schaff, and L. F. Eastman, “Design of quantum well lasers for high differential gain,” in Conf. Dig. LEOS ‘91 Ann. Meet., 1991, p.86.
-
(1991)
Conf. Dig. LEOS ‘91 Ann. Meet.
, pp. 86
-
-
Lester, L.F.1
Teng, D.2
Schaff, W.J.3
Eastman, L.F.4
-
67
-
-
0025506065
-
Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in In-GaAs/InGaAsP MQW λ/4-Shifted DFB lasers
-
M. Aoki, K. Uomi, T. Tsuchiya, and N. Chinone, “Enhanced relaxation oscillation frequency and reduced nonlinear K-factor in In-GaAs/InGaAsP MQW λ/4-Shifted DFB lasers,” Electron. Lett., vol. 26, pp. 1841–1843, 1991.
-
(1991)
Electron. Lett.
, vol.26
, pp. 1841-1843
-
-
Aoki, M.1
Uomi, K.2
Tsuchiya, T.3
Chinone, N.4
-
68
-
-
0007223287
-
Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers
-
A. Garbmaier, A. Hangleiter, G. Fuchs, J. E. A. Whiteaway, and R. W. Glew, “Low nonlinear gain in InGaAs/InGaAlAs separate confinement multiquantum well lasers,” Appl. Phys. Lett., vol. 59, pp. 3024–3026, 1991.
-
(1991)
Appl. Phys. Lett.
, vol.59
, pp. 3024-3026
-
-
Garbmaier, A.1
Hangleiter, A.2
Fuchs, G.3
Whiteaway, J.E.A.4
Glew, R.W.5
|