Nanoscale Tera-Hertz Metal-Semiconductor-Metal Photodetectors

IEEE Journal of Quantum Electronics

Volumn 28, Issue 10, 1992, Pages 2358-2368

  Chou, Stephen Y ^a   Liu, Mark Y ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROOPTICAL EFFECTS; MONTE CARLO METHODS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICES; ULTRAFAST PHENOMENA;

METAL-SEMICONDUCTOR-METAL PHOTODETECTORS; TERA-HERTZ PHOTODETECTOR;

PHOTODETECTORS;

EID: 0026938145     PISSN: 00189197     EISSN: 15581713     Source Type: Journal    
DOI: 10.1109/3.159542     Document Type: Article

References (57)

1. S. M. Sze, D. J. Coleman Jr., and A. Loya, “Current transport in metal-semiconductor-metal (MSM) structures,” Solid-State Electron., vol. 14, pp. 1209–1218, 1971.
2. For more detailed overview of history of MSM PD's in 70's and 80's, see, for example, C. H. Lee, Picosecond Optoelectronic Devices. New York: Academic, 1984.
3. R. A. Lawton, and A. Scavannec, “Photoconductive detectors of fast-transition optical waveforms,” Electron. Lett., vol. 11, pp. 74–75, 1975.
4. D. H. Auston, A. M. Johnson, P. R. Smith, and J. C. Bean, “Picosecond optoelectronic detection, sampling, and correlation measurements in amorphous semiconductors,” Appl. Phys. Lett., vol. 37, pp. 371–373, 1980.
5. D. H. Auston and P. R. Smith, “Picosecond optical electronic sampling: Characterization of high-speed photodetectors,” Appl. Phys. Lett., vol. 41, pp. 599–601, 1982.
6. P. R. Smith, D. H. Auston, A. M. Johnson, and W. M. Augustyniak, “Picosecond photoconductivity in radiation-damaged silicon-on-sapphire films,” Appl. Phys. Lett., vol. 38, pp. 47–49, 1981.
7. F. E. Doany, D. Grischkowsky, and C. C. Chi, “Carrier lifetime versus ion-implantation dose in silicon on sapphire,” Appl. Phys. Lett., vol. 50, pp. 460–462, 1987.
8. O. Wada, H. Hamaguchi, M. Makiuchi, T. Kumai, M. Ito, K. Nakai, T. Horimatsu, and T. Sakurai, “Monolithic four-channel photo-diode/amplifier receiver array integrated on a GaAs substrate,” J. Lightwave Technol., vol. LT-4, pp. 1694–1703, 1986.
9. M. Ito and O. Wada, “Low dark current GaAs metal-semiconductor-metal (MSM) photodiodes using WSix contacts,” IEEE J. Quantum Electron., vol. QE-22, pp. 1073–1077, 1986.
10. G. K. Chang, W. P. Hong, J. L. Gimlett, R. Bhat, and C. K. Nguyen, “High-performance monolithic dual-MSM photodetector for long-wavelength coherent receivers,” Electron. Lett., vol. 25, no. 16, pp. 1018–1023, 1989.
11. C. S. Harder, B. van Zeghbroeck, H. Meier, W. Patrick, and P. Vettiger, “5.2 GHz bandwidth monolithic GaAs optoelectronic receiver,” IEEE Electron. Device Lett., vol. 9, pp. 171–173, 1988.
12. B. J. van Zeghbroeck, W. Patrick, J. M. Halbout, and P. Vettiger, “105-GHz bandwidth metal-semiconductor-metal photodiode,” IEEE Electron. Device Lett., vol. 9, pp. 527–529, 1988.
13. C. S. Harder, B. J. van Zeghbroeck, M. P. Kesler, H. P. Meier, P. Vettiger, D. J. Webb, and P. Wolf, “High-speed GaAs/AlGaAs optoelectronic devices for computer application,” IBM J. Res. Develop., vol. 34, pp. 568–583, 1990.
14. W. C. Koscielniak, R. M. Kolbas, and M. A. Littlejohn, “Performance of a near-infrared GaAs metal-semiconductor-metal (MSM) photodetector with islands,” IEEE Electron. Device Lett., vol. 9, pp. 485–487, 1988.
15. M. Lambsdroff, J. Kuhl, M. Klingenstein, C. Moglestue, J. Rosenzweig, A. Axmann, J. Schneider, H. Leier, and A. Forchel, “Direct observation of the electron and hole contributions in the impulse response of a metal-semiconductor-metal Schottky Diode,” in Ultrafast Phenomena VII, Monterey, CA, 1990, pp. 291–293.
16. C. Moglestue, J. Rosenzweig, J. Kuhl, M. Klingenstein, M. Lambsdorff, A. Axmann, J. Schneider, and A. Hulsmann, “Picosecond pulse response characteristics of GaAs metal-semiconductor-metal (MSM) photodetectors,” J. Appl. Phys., vol. 70, pp. 2435–2448, 1991.
17. K. Nakajima, T. Iida, K. I. Sugimoto, H. Kan, and Y. Mizushima, “Properties and design theory of ultrafast GaAs metal-semiconductor-metal photodetector with symmetrical Schottky contacts,” IEEE Trans. Electron Devices, vol. 37, pp. 31–35, 1990.
18. J. Degani, R. F. Leheny, R. E. Nahory, M. A. Pollack, J. P. Heritage, and J. C. DeWinter, “Fast photoconductive detector using p-In0.53 Ga0.47As with response to 1.7 μm,” Appl. Phys. Lett., vol. 38, pp. 27–29, 1981.
19. J. B. D. Soole, H. Schumacher, H. P. Leblanc, R. Bhat, and M. A. Koza, “High-speed performance of OMCVD grown InAlAs/InGaAs MSM photodetectors at 1.5 μm and 1.3 μm wavelengths,” IEEE Photon, Technol. Lett., vol. 1, pp. 250–252, 1989.
20. J. B. D. Soole, H. Schumacher, R. Esagui, H. P. Leblanc, R. Bhat, and M. A. Koza, “High-speed metal-semiconductor-metal waveguide photodetector on InP,” Appl. Phys. Lett., vol. 55, pp. 2173–2175, 1989.
21. W. P. Hong, G. K. Chang, and R. Bhat, “High-performance Al0]5Gao 85As/In0.53Ga0.47As MSM photodetectors grown by OMCVD,” IEEE Trans. Electron Devices, vol. 36, pp. 659–662, 1989.
22. L. Yong, A. S. Sudbo, R. A. Logan, T. Tanbun-Ek, and W. T. Tsang, “High-performance of Fe: InP/InGaAs metal/semiconductor/metal photodetectors grown by metalorganic vapor phase epitaxy,” IEEE Photon. Technol. Lett., vol. 2, pp. 56–58, 1990.
23. A. M. Johnson, R. H. Lum, W. M. Simpson, and J. Klingert, “Picosecond OMVPE GaAs/Si02 photoconductive devices and applications in materials characterization,” IEEE J. Quantum Electron., vol. QE-23, pp. 1180–1184, 1987.
24. Y. Chen, S. Williamson, T. Brock, F. W. Smith, and A. R. Calawa, “375-GHz photodiode on low-temperature GaAs,” Appl. Phys. Lett., vol. 59, pp. 1984–1986, 1991.
25. M. Klingenstein, J. Khul, R. Notzel, K. Ploog, J. Rosenzweig, C. Moglestue, A. Hulsmann, J. Schneider, and K. Kohler, “Ultrafast metal-semiconductor-metal-photodiodes fabricated on low-temperature GaAs,” Appl. Phys. Lett., vol. 60, pp. 627–629, 1992.
26. D. H. Auston, P. Lavallard, N. Sol, and D. Kaplan, “An amorphous silicon photodetector for picosecond pulses,” Appl. Phys. Lett., vol. 36, pp. 66–68, 1980.
27. R. J. Phelan, D. R. Larson, N. V. Frederick, and D. L. Franzen, “Submicrometer interdigital silicon detectors for the measurement of picosecond optical pulses,” in Proc. SPIE, vol. 439, pp. 207–211, 1983.
28. A. M. Johnson, A. M. Glass, D. H. Olson, W. M. Simpson, and J. P. Harbison, “High quantum efficiency amorphous silicon photodetectors with picosecond response times,” Appl. Phys. Lett., vol. 44, pp. 450–452, 1984.
29. M. M. Howerton, and T. E. Batchman, “A thin-film waveguide photodetector using hydrogenerated amorphous silicon,” J. Lightwave Technol., vol. 6, pp. 1854–1860, 1988.
30. R. J. Seymour and B. K. Garside, “Ultrafast silicon interdigital photodiodes for ultraviolet applications,” Canad. J. Phys., vol. 63, pp. 707–711, 1985.
31. B. W. Mullins, S. F. Soares, K. A. McArdle, C. W. Wilson, and S. R. J. Brueck, “A simple high-speed Si Schottky photodiode,” IEEE Photon. Technol. Lett., vol. 3, pp. 360–362, 1991.
32. S. Y. Chou and P. B. Fischer, “Double 15-nm-wide metal gates 10 nm apart and 70 nm thick on GaAs,” J. Vac. Sci. Technol., vol. B8, pp. 1919–1922, 1990.
33. S. Y. Chou, Y. Liu, and P. B. Fischer, “High-speed GaAs metal-semiconductor-metal photodetectors with sub-0.1 μm finger-width and finger-spacing,” in Proc. SPIE, vol. 1474, 1991.
34. — “Fabrication of sub-50 nm finger spacing and width high-speed metal-semiconductor-metal photodetectors using high-resolution electron beam lithography and molecular beam epitaxy,” J. Vac. Sci. Technol, vol. B9, pp. 2920–2924, 1991.
35. —, “Tera-hertz GaAs metal-semiconductor-metal photodetectors with 25 nm finger spacing and width,” Appl. Phys. Lett., vol. 61, no. 4, pp. 477–479, 1992.
36. S. Y. Chou and Y. Liu, “Picosecond metal-semiconductor-metal photodetectors with nanometer finger structure on bulk Si, semi-insulating GaAs, and low-temperature-grown GaAs,” presented at Conf. Lasers and Electro-Opt., Anaheim, CA, May 1992.
37. Y. Liu, S. Y. Chou, and P. B. Fischer, “Picosecond metal-semiconductor-metal photodetectors with sub-100-nm finger spacing and finger width on GaAs,” presented at Picosec. Electron, and Opto-electron., Salt Lake City, UT, Apr. 1991.
38. E. Sano, “Two-dimensional ensemble Monte Carlo calculation of pulse responses of submicrometer GaAs metal-semiconductor-metal (MSM) photodetectors,” IEEE Trans. Electron. Devices, vol. 38, pp. 2075–2081, 1991.
39. W. C. Koscielniak, M. A. Littlejohn, and J. L. Pelouard, “Analysis of a GaAs metal-semiconductor-metal (MSM) photodetector with 0.1-μm finger spacing,” IEEE Electron Devices Lett., vol. 10, pp. 209–211, 1989.
40. W. C. Koscielniak, J. L. Pelouard, and M. A. Littlejohn, “Dynamic behavior of photocarriers in a GaAs metal-semiconductor-metal photodetector with sub-half-micron electrode pattern,” Appl. Phys. Lett., vol. 54, pp. 567–569, 1989.
41. J. G. Ruth, “Electron dynamics in short channel field-effect transistors,” IEEE Trans. Electron Devices, vol. ED-19, pp. 652–654, 1972.
42. S. Y. Chou, D. A. Antoniadis, and H. I. Smith, “Observation of electron velocity overshoot in sub-100-nm-channel MOSFET's in Silicon,” IEEE Electron Device Lett., vol. 6, pp. 665–667, 1985.
43. Y. C. Lim and R. A. Moore, “Properties of alternately charged coplanar parallel strips by conformal mappings,” IEEE Trans. Electron Devices, vol. ED-15, pp. 173–180, 1968.
44. T. Y. Hsiang, S. Alexandrou, R. Sobolewski, S. Y. Chou, and Y. Liu, “Sub-picosecond characterization of nanometer-scale metal-semiconductor-metal photodiodes,” presented at Conf. Lasers and Electro-Opt., Anaheim, CA, May, 1992.
45. J. A. Valdmanis and G. Mourou, “Subpicosecond electrooptic sampling: Principles and applications,” IEEE J. Quantum Electron., vol. QE-22, pp. 69–78, 1986.
46. S. Y. Chou, Y. Liu, and T. F. Carruthers, “32 GHz metal-semiconductor-metal photodetectors on crystalline silicon,” Appl. Phys. Lett., in press.
47. S. Y. Chou, Y. Liu, W. Khalil, T. Y. Hsiang, and S. Alexandrou, “Ultrafast nanoscale metal-semiconductor-metal photodetectors on bulk and low-temperature-grown GaAs,” Appl. Phys. Lett., vol. 61, no. 7, pp. 819–821, 1992.
48. M. Y. Frankel, S. Gupta, J. A. Valdmanis, and G. Mourou, “Terahertz attenuation and dispersion characteristics of coplanar transmission lines,” IEEE Trans. Microwave Theory Tech., vol. 39, pp. 910–916, 1991.
49. M. Y. Frankel, J. F. Whitaker, G. A. Mourou, and J. A. Valdmanis, “Experimental characterization of external electrooptic probes,” IEEE Microwave Guided Wave Lett., vol. 1, pp. 60–62, 1991.
50. S. Gupta, J. F. Whitaker, and G. A. Mourou, “Subpicosecond pulse propagation on coplanar waveguides: Experimental and simulation,” IEEE Microwave Guided Wave Lett., vol. 1, pp. 161–163, 1991.
51. D. Krokel, D. Grischkowsky, and M. B. Ketchen, “Subpicosecond electrical pulse generation using photoconductive switches with long carrier lifetimes,” Appl. Phys. Lett., vol. 54, pp. 1046–1047, 1989.
52. F. W. Smith, H. Q. Le, V. Diadiuk, M. A. Hollis, A. R. Calawa, S. Gupta, M. Frankel, D. R. Dkykaar, G. A. Mourou, and T. Y. Hsiang, “Picosecond GaAs-based photoconductive optoelectronic detectors,” Appl. Phys. Lett., vol. 54, pp. 890–892, 1989.
53. M. Kaminska, Z. Liliental-Weber, E. R. Weber, T. George, J. B. Kortright, F. W. Smith, B. Y. Tsaur, and A. R. Calawa, “Structure properties of As-rich GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett., vol. 54, pp. 1881–1883, 1989.
54. A. C. Warren, J. M. Woodall, J. F. Freeouf, D. Grischkowsky, D. T. McIntuff, M. R. Melloch, and N. Otsuka, “Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxy, ” Appl. Phys. Lett., vol. 57, pp. 1331–1333, 1990.
55. A. C. Warren, N. Katzenellenbogen, D. Grischkowsky, J. M. Woodall, M. R. Melloch, and N. Otsuka, “Subpicosecond, freely propergating electromagnetic pulse generation and detection using GaAs: As epilayers,” Appl. Phys.Lett., vol. 58, pp. 1512–1514, 1991.
56. S. Gupta, M. Y. Frankel, J. A. Valdmanis, J. F. Whitaker, G. A. Mourou, F. W. Smith, and A. R. Calawa, “Subpicosecond carrier lifetime in GaAs grown by molecular beam epitaxy at low temperatures,” Appl. Phys. Lett., vol. 59, pp. 3276–3278, 1991.
57. R. L. Peterson, “Numerical study of currents and fields in a photoconductive detector,” IEEE J. Quantum Electron., vol. QE-23, pp. 1185–1192, 1987.