Power Law GaAs MESFET Model

IEEE Transactions on Electron Devices

Volumn 39, Issue 10, 1992, Pages 2415-2417

  Peczalski, Andrzej ^c  

^a CRAY INC   (United States)

^b UNIVERSITY OF VIRGINIA   (United States)

^c HONEYWELL   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; INTEGRATED CIRCUITS; SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT-VOLTAGE CHARACTERISTICS; GALLIUM ARSENIDE MESFET; MESFET POWER LAW MODEL; PINCH-OFF VOLTAGES;

MESFET DEVICES;

EID: 0026938132     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.158819     Document Type: Article

References (8)

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