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Volumn 31, Issue 9 R, 1992, Pages 2954-2958
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Patterning Characteristics of a Chemically-Amplified Negative Resist in Synchrotron Radiation Lithography
a a a a
a
NTT CORPORATION
(Japan)
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Author keywords
Chemically amplified resist; Critical dimension control; Exposure latitude; Post exposure baking; Resolution; Sr lithography; X ray lithography
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Indexed keywords
AMPLIFICATION;
DIMENSIONAL STABILITY;
FABRICATION;
MATHEMATICAL MODELS;
OPTICAL RESOLVING POWER;
PATTERN RECOGNITION;
SYNCHROTRON RADIATION;
X RAY LITHOGRAPHY;
ASPECT RATIO;
CHEMICAL AMPLIFICATION;
CRITICAL DIMENSION CONTROL;
NEGATIVE RESIST SAL601-ER7;
PATTERNING CHARACTERISTICS;
POST EXPOSURE BAKING;
RESOLUTION LIMITING FACTORS;
SENSITIVITY;
SUBQUARTERMICRON DEVICE FABRICATION;
SWAYING BEAM MODEL;
PROTECTIVE COATINGS;
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EID: 0026928382
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.31.2954 Document Type: Article |
Times cited : (90)
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References (16)
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