Characteristics of nMOS/GAA (Gate-All-Around) transistors near threshold

Microelectronic Engineering

Volumn 19, Issue 1-4, 1992, Pages 815-818

  Francis, P ^a   Terao, A ^a,b   Flandre, D ^a,b   Van de Wiele, F ^a  

^a UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

MOS DEVICES; SEMICONDUCTOR DEVICE MODELS;

GAA (GATE-ALL-AROUND) TRANSISTORS; MOS TRANSISTORS; NMOS TRANSISTORS;

FIELD EFFECT TRANSISTORS;

EID: 0026927930     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(92)90551-2     Document Type: Article

References (3)