-
1
-
-
0020763683
-
A mobility model for carriers in the MOS inversion layer
-
June
-
K. Yamaguchi, “A mobility model for carriers in the MOS inversion layer,” IEEE Trans. Electron Devices., vol. ED-30, pp. 658–663, June 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 658-663
-
-
Yamaguchi, K.1
-
2
-
-
0021508016
-
Three-dimensional device simulator CADDETH with highly convergent matrix solution algorithms
-
Oct.
-
T. Toyabe, H. Masuda, Y. Aoki, H. Shukuri, and T. Hagiwara, “Three-dimensional device simulator CADDETH with highly convergent matrix solution algorithms,” IEEE Trans. Computer-Aided Design, vol. CAD-4, pp. 482–488, Oct. 1985.
-
(1985)
IEEE Trans. Computer-Aided Design
, vol.CAD-4
, pp. 482-488
-
-
Toyabe, T.1
Masuda, H.2
Aoki, Y.3
Shukuri, H.4
Hagiwara, T.5
-
3
-
-
0009806361
-
HFIELD: A highly flexible 2-D semiconductor-device analysis program
-
G. Baccarani, R. Guerrier, P. Ciampolini, and M. Rudan, “HFIELD: A highly flexible 2-D semiconductor-device analysis program,” in Proc. NASECODE IV Conf., 1985, pp. 3–12.
-
(1985)
Proc. NASECODE IV Conf.
, pp. 3-12
-
-
Baccarani, G.1
Guerrier, R.2
Ciampolini, P.3
Rudan, M.4
-
4
-
-
0024703660
-
Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling
-
July
-
S.-W. Lee “Universality of mobility-gate field characteristics of electrons in the inversion charge layer and its application in MOSFET modeling,” IEEE Trans, on Computer-Aided Design, vol. 8, pp. 724–730, July 1989.
-
(1989)
IEEE Trans, on Computer-Aided Design
, vol.8
, pp. 724-730
-
-
Lee, S.-W.1
-
5
-
-
0024684382
-
A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers
-
June
-
H. Shin, A. F. Tasch, Jr., C. M. Maziar, and S. K. Banerjee, “A new approach to verify and derive a transverse-field-dependent mobility model for electrons in MOS inversion layers,” IEEE Trans. Electron Devices, vol. ED-36, pp. 1117–1124, June 1989.
-
(1989)
IEEE Trans. Electron Devices
, vol.ED-36
, pp. 1117-1124
-
-
Shin, H.1
Tasch, A.F.2
Maziar, C.M.3
Banerjee, S.K.4
-
6
-
-
0020918485
-
Semi-empirical equations for electron velocity and silicon: Part II—MOS inversion layers
-
Dec.
-
S. A. Schwarz and S. E. Russek, “Semi-empirical equations for electron velocity and silicon: Part II—MOS inversion layers,” IEEE Trans. Electron Devices, vol. ED-30, pp. 1634–1639, Dec. 1983.
-
(1983)
IEEE Trans. Electron Devices
, vol.ED-30
, pp. 1634-1639
-
-
Schwarz, S.A.1
Russek, S.E.2
-
7
-
-
0024178927
-
On the universality of inversion-layer mobility in N- and P-channel MOSFET’s
-
S. Takagi, M. Iwase, and A. Toriumi, “On the universality of inversion-layer mobility in N- and P-channel MOSFET’s,” in IEDM Tech. Dig., pp. 398–401, 1988.
-
(1988)
IEDM Tech. Dig.
, pp. 398-401
-
-
Takagi, S.1
Iwase, M.2
Toriumi, A.3
-
8
-
-
0018683243
-
Characterization of the electron mobility in the inverted 〈100〉 Si surface
-
A. G. Sabnis and J. T. Clemens, “Characterization of the electron mobility in the inverted 〈100〉 Si surface,” in IEDM Tech. Dig., pp. 18–21, 1979.
-
(1979)
IEDM Tech. Dig.
, pp. 18-21
-
-
Sabnis, A.G.1
Clemens, J.T.2
-
9
-
-
0023596537
-
Universal mobility-field curves for electrons and holes in MOS inversion layers
-
J. T. Watt and J. D. Plummer, “Universal mobility-field curves for electrons and holes in MOS inversion layers,” in Symp. VLSI Technol. Dig. Tech. Papers, pp. 81–82, 1987.
-
(1987)
Symp. VLSI Technol. Dig. Tech. Papers
, pp. 81-82
-
-
Watt, J.T.1
Plummer, J.D.2
-
10
-
-
0025439799
-
Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation
-
June
-
S.-W. Lee, “Extraction of MOSFET carrier mobility characteristics and calibration of a mobility model for numerical device simulation,” Solid-State Electronics, vol. 33, pp. 719–726, June 1990.
-
(1990)
Solid-State Electronics
, vol.33
, pp. 719-726
-
-
Lee, S.-W.1
-
11
-
-
0026171426
-
Physicallybased models for effective mobility and local-field mobility of electrons in MOS inversion layers
-
June
-
H. Shin, G. M. Yeric, A. F. Tasch, and C. M. Maziar, “Physicallybased models for effective mobility and local-field mobility of electrons in MOS inversion layers,” Solid-State Electronics, vol. 34, no. 6, pp. 545–552, June 1991.
-
(1991)
Solid-State Electronics
, vol.34
, Issue.6
, pp. 545-552
-
-
Shin, H.1
Yeric, G.M.2
Tasch, A.F.3
Maziar, C.M.4
-
12
-
-
0024105667
-
A physically based mobility model for numerical simulation of nonplanar devices
-
Nov.
-
C. Lombardi, S. Manzini, A. Saporito, and M. Vanzi, “A physically based mobility model for numerical simulation of nonplanar devices,” IEEE Trans. Computer-Aided Design, vol. 7, pp. 1164–1171, Nov. 1988.
-
(1988)
IEEE Trans. Computer-Aided Design
, vol.7
, pp. 1164-1171
-
-
Lombardi, C.1
Manzini, S.2
Saporito, A.3
Vanzi, M.4
-
13
-
-
0024718364
-
MOSFET electron inversion layer mobilities—a physically based semi-empirical model for a wide temperature range
-
Aug.
-
D. S. Jeon and D. E. Burk, “MOSFET electron inversion layer mobilities—a physically based semi-empirical model for a wide temperature range,” IEEE Trans. Electrbn Devices, vol. 36, pp. 1456–1463, Aug. 1989.
-
(1989)
IEEE Trans. Electrbn Devices
, vol.36
, pp. 1456-1463
-
-
Jeon, D.S.1
Burk, D.E.2
-
14
-
-
0019003692
-
Relation of drift velocity to low-field mobility and high-field saturation velocity
-
Apr.
-
K. K. Thornber, “Relation of drift velocity to low-field mobility and high-field saturation velocity,” J. Appl. Phys., vol. 51, pp. 2127-2136, Apr. 1980.
-
(1980)
J. Appl. Phys.
, vol.51
, pp. 2127-2136
-
-
Thornber, K.K.1
-
15
-
-
0025578686
-
A unified mobility model for device simulation
-
D. B. M. Klaassen, “A unified mobility model for device simulation,” in IEDM Tech. Dig., pp. 357–360, 1990.
-
(1990)
IEDM Tech. Dig.
, pp. 357-360
-
-
Klaassen, D.B.M.1
-
16
-
-
0009509593
-
Carrier mobilities in silicon empirically related to doping and field
-
D. M. Caughey and R. E. Thomas, “Carrier mobilities in silicon empirically related to doping and field,” Proc. IEEE, vol. 52, pp. 2192–2193, 1967.
-
(1967)
Proc. IEEE
, vol.52
, pp. 2192-2193
-
-
Caughey, D.M.1
Thomas, R.E.2
-
17
-
-
0012832787
-
Electron mobility empirically related to the phosphorous concentration in silicon
-
G. Baccarani and P. Ostoja, “Electron mobility empirically related to the phosphorous concentration in silicon,” Solid-State Electronics, vol. 18, pp. 579–580, 1975.
-
(1975)
Solid-State Electronics
, vol.18
, pp. 579-580
-
-
Baccarani, G.1
Ostoja, P.2
|