Thin high-dielectric TiO2 films prepared by low pressure MOCVD

Microelectronic Engineering

Volumn 19, Issue 1-4, 1992, Pages 725-728

  Rausch, N ^a   Burte, E P ^a  

^a Fraunhofer Arbeitsgruppe für Intergrierte Schaltungen ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; MOCVD; RANDOM ACCESS STORAGE; SEMICONDUCTING FILMS;

DRAM; HIGH-DENSITY DRAM; HIGH-DIELECTRIC FILMS; LOW-POWER DRAM;

ULSI CIRCUITS;

EID: 0026924108     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(92)90531-U     Document Type: Article

References (4)