Electrical Characteristics of Ferroelectric PZT Thin Films for DRAM Applications

IEEE Transactions on Electron Devices

Volumn 39, Issue 9, 1992, Pages 2044-2049

  Shepherd, William H ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b NATIONAL SEMICONDUCTOR CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; LEAD COMPOUNDS; LEAKAGE CURRENTS; RANDOM ACCESS STORAGE; THIN FILMS;

DRAM; LEAD ZIRCONATE TITANATE;

FERROELECTRIC MATERIALS;

EID: 0026923249     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.155876     Document Type: Article

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