Characteristics of Silicon Wafer-Bond Strengthening by Annealing

Journal of the Electrochemical Society

Volumn 139, Issue 9, 1992, Pages 2589-2594

  Horiuchi, Masatada ^a   Aoki, Shigeru ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BONDING; INTERFACES (MATERIALS); MASS TRANSFER; MATHEMATICAL MODELS; MICROSCOPIC EXAMINATION; SILICON; STRENGTHENING (METAL); SURFACE PHENOMENA;

BOND STRENGTHENING; SILICON ON INSULATOR DEVICES; SILICON WAFERS;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026914356     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221269     Document Type: Article

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