MOSFET Drain Engineering Analysis for Deep-Submicrometer Dimensions: A New Structural Approach

IEEE Transactions on Electron Devices

Volumn 39, Issue 8, 1992, Pages 1922-1927

  Shin, Hyungsoon ^a   Bordelon, T James ^b   Tasch, Ai F ^c   Maziar, Christine M ^c  

^a LG Electronics Inc   (South Korea)

^b INTEL CORPORATION   (United States)

^c UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS--CHARGE CARRIERS; TRANSISTORS, FIELD EFFECT;

DEEP-SUBMICROMETER MOSFET; MOS TRANSISTORS;

SEMICONDUCTOR DEVICES;

EID: 0026910749     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.144685     Document Type: Article

References (14)

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