Evaluation of Oxygen Precipitated Silicon Crystals by Deep-Level Photoluminescence at Room Temperature and its Mapping

Journal of the Electrochemical Society

Volumn 139, Issue 8, 1992, Pages 2277-2281

  Kitagawara, Y ^a   Hoshi, R ^a   Takenaka, T ^a  

^a SHIN ETSU CHEMICAL CO LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; MATHEMATICAL MODELS; OXYGEN; PHOTOLUMINESCENCE; PRECIPITATION (CHEMICAL);

CZOCHRALSKI SILICON CRYSTALS; DEEP LEVEL PHOTOLUMINESCENCE; OXYGEN PRECIPITATED SILICON CRYSTALS;

SEMICONDUCTING SILICON;

EID: 0026909188     PISSN: 00134651     EISSN: 19457111     Source Type: Journal    
DOI: 10.1149/1.2221215     Document Type: Article

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