Process for en hancem ent/depletion-mode GaAs/InGaAs/AIGaAs Pseudomorphic modfets using selective wet gate recessing

Electronics Letters

Volumn 28, Issue 17, 1992, Pages 1633-1634

  Tong, M ^a   Nummila, K ^a   Seo, J W ^a   Ketterson, A ^a   Adesida, I ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

Field effect transistors; Semiconductor devices and materials

Indexed keywords

LOGIC CIRCUITS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SOLID STATE OSCILLATORS;

DEPLETION-MODE MODFET; ENHANCEMENT/DEPLETION MODES; GALLIUM ARSENIDE; MODFET; MODULATION-DOPED FET; PSEUDOMORPHIC MODFET; TRANSCONDUCTANCE;

FIELD EFFECT TRANSISTORS;

EID: 0026908331     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19921039     Document Type: Article

References (5)

1. Wanatabe, Y., Kajii, K., Asada, Y., Odani, K., Mimura, T., and Abe, M.: ‘A high-speed HEMT 1–5K gate array’, IEEE Trans., 1987, ED-34, pp. 1253–1258
2. Abe, M., Mimura, T., Kobayashi, N., Suzuki, M., Kosugi, M., Nakayama, M., Odani, K., and Hanyu, I.: ‘Recent advances in ultrahighspeed HEMT LSI technology’, IEEE Trans., 1989, ED-36, pp. 2021–2031
3. Huelsmann, A., Kaufel, G., Koehler, K., Raynor, B., Schneider, J., and Jakobus, T.: ‘E-beam direct-write in a dry-etched recess gate HEMT process for GaAs/AlGaAs circuits’, Jpn. J. Appl. Phys., 1990, 29, pp.2317–2320
4. T = 170 GHz’, Microelectronic Eng., 1990, 11, pp. 69–72
5. Tong, M., Balegeer, D. G., Ketterson, A., Roan, E. J., Cheng, K. Y., and Adesida, I.: ‘A comparative study of wet and dry selective etching processes for GaAs/AlGaAs/InGaAs pseudomorphic MODFETs’, J. Electron. Mater., 1992, 21, pp. 9–15