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Volumn 40, Issue 8, 1992, Pages 1709-1712

A Semidistributed HEMT Model for Accurate Fitting and Extrapolation of S-Parameters and Noise Parameters

Author keywords

[No Author keywords available]

Indexed keywords

OPTIMIZATION--APPLICATIONS; TRANSISTORS, HIGH ELECTRON MOBILITY--OPTIMIZATION;

EID: 0026903718     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.149534     Document Type: Article
Times cited : (7)

References (14)
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    • (1975) Advances in Electronics and Electron Physics , vol.38
    • Pucel, R.A.1    Haus, H.A.2    Statz, H.3
  • 2
    • 0022511516 scopus 로고
    • The noise properties of high electron mobility transistors
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    • Brookes, T.M.1
  • 3
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    • A. Cappy, A. Vanoverschelde, M. Schortgen, C. Versnaeyen, and G. Salmer, “Noise modelling in submicrometer-gate two-dimensional electron gas field effect transistors,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2787-2795, Dec. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2787-2795
    • Cappy, A.1    Vanoverschelde, A.2    Schortgen, M.3    Versnaeyen, C.4    Salmer, G.5
  • 4
    • 0000907948 scopus 로고
    • A Monte Carlo particle study of the intrinsic noise figure in GaAs MESFET
    • Oct.
    • C. Moglestue, “A Monte Carlo particle study of the intrinsic noise figure in GaAs MESFET,” IEEE Trans. Electron Devices, vol. ED-32, pp. 2092-2096, Oct. 1985.
    • (1985) IEEE Trans. Electron Devices , vol.ED-32 , pp. 2092-2096
    • Moglestue, C.1
  • 5
    • 0018491891 scopus 로고
    • Design of Microwave GaAs MESFETs for broadband, low-noise amplifiers
    • July
    • H. Fukui, “Design of Microwave GaAs MESFETs for broadband, low-noise amplifiers,” IEEE Trans. Microwave Theory Tech., vol. MTT-27, pp. 643-650, July 1979.
    • (1979) IEEE Trans. Microwave Theory Tech. , vol.MTT-27 , pp. 643-650
    • Fukui, H.1
  • 6
    • 0018490967 scopus 로고
    • Optimal noise figure of microwave GaAs MESFETs
    • July
    • H. Fukui, “Optimal noise figure of microwave GaAs MESFETs,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1032-1037, July 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1032-1037
    • Fukui, H.1
  • 7
    • 0019569028 scopus 로고
    • A functional GaAs FET noise model
    • May
    • A. F. Podell, “A functional GaAs FET noise model,” IEEE Trans. Electron Devices, vol. ED-28, pp. 511-517, May 1981.
    • (1981) IEEE Trans. Electron Devices , vol.ED-28 , pp. 511-517
    • Podell, A.F.1
  • 8
    • 0023999375 scopus 로고
    • Microwave noise characterization of GaAs MESFETs: Determination of extrinsic noise parameters
    • Apr.
    • M. S. Gupta and P. T. Greiling, “Microwave noise characterization of GaAs MESFETs: Determination of extrinsic noise parameters,” IEEE Trans. Microwave Theory Tech., vol. 36, pp. 745-751, Apr. 1988.
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    • Gupta, M.S.1    Greiling, P.T.2
  • 9
    • 0024738288 scopus 로고
    • Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence
    • Sept.
    • M. W. Pospieszalski, “Modeling of noise parameters of MESFETs and MODFETs and their frequency and temperature dependence,” IEEE Trans. Microwave Theory Tech., vol. 37, pp. 1340-1350, Sept. 1989.
    • (1989) IEEE Trans. Microwave Theory Tech. , vol.37 , pp. 1340-1350
    • Pospieszalski, M.W.1
  • 10
    • 0023042369 scopus 로고
    • Limits of FET modelling by lumped elements
    • June
    • W. Heinrich, “Limits of FET modelling by lumped elements,” Electron. Lett., vol. 22, pp. 630-632, June 1986.
    • (1986) Electron. Lett. , vol.22 , pp. 630-632
    • Heinrich, W.1
  • 11
    • 0025445197 scopus 로고
    • Semidistributed model of millimeter-wave FET for S-parameter and noise figure predictions
    • June
    • L. Escotte and J. Mollier, “Semidistributed model of millimeter-wave FET for S-parameter and noise figure predictions,” IEEE Trans. Microwave Theory Tech., vol. 38, pp. 748-753, June 1990.
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    • Escotte, L.1    Mollier, J.2
  • 12
    • 0022792365 scopus 로고
    • Simple models for high-frequency MESFETs and comparison with experimental results
    • pt. H, Oct.
    • C. H. Oxley and A. J. Holden, “Simple models for high-frequency MESFETs and comparison with experimental results,” Proc. Inst. Elec. Eng., vol. 133, pt. H, pp. 335-340, Oct. 1986.
    • (1986) Proc. Inst. Elec. Eng. , vol.133 , pp. 335-340
    • Oxley, C.H.1    Holden, A.J.2
  • 14
    • 84941501352 scopus 로고
    • Problems associated with small signal MESFET equivalent circuit model parameter extraction
    • Queens University, Belfast, Mar.
    • A. D. Patterson, V. F. Fusco, J. J. McKeown, and J. A. C. Stewart, “Problems associated with small signal MESFET equivalent circuit model parameter extraction,” in Dig. 14th ARMMS Conf., Queens University, Belfast, Mar. 1991.
    • (1991) Dig. 14th ARMMS Conf.
    • Patterson, A.D.1    Fusco, V.F.2    McKeown, J.J.3    Stewart, J.A.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.