Analytical Model for Optically Generated Currents in GaAs MESFETs

IEEE Transactions on Microwave Theory and Techniques

Volumn 40, Issue 8, 1992, Pages 1681-1691

  Madjar, Asher ^a   Herczfeld, Peter R ^b   Paolella, Arthur ^b  

^a DREXEL UNIVERSITY   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE--APPLICATIONS; SEMICONDUCTOR DEVICES, MESFET--OPTICAL PROPERTIES;

GATE PHOTOVOLTAGE; ILLUMINATED MESFET; LEAKAGE PHOTOCURRENT; OPTICALLY SENSITIVE MICROWAVE ELEMENT; OPTICALLY-GENERATED CURRENTS;

SEMICONDUCTOR DEVICES, MESFET;

EID: 0026901292     PISSN: 00189480     EISSN: 15579670     Source Type: Journal    
DOI: 10.1109/22.149548     Document Type: Article

References (21)

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