Large Area Cylindrical Silicon Drift Detector

IEEE Transactions on Nuclear Science

Volumn 39, Issue 4, 1992, Pages 619-628

  Faschingbauer, U ^d   Schmitt, B ^d   Warner, A ^d   Wurm, J P ^d  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b POLITECNICO DI MILANO   (Italy)

^c KETEK GMBH   (Germany)

^d MAX PLANCK INSTITUT FÜR KERNPHYSIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

RADIATION DAMAGE; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES;

SILICON DRIFT DETECTORS;

RADIATION DETECTORS;

EID: 0026900631     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.159676     Document Type: Article

References (9)

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4. U. Faschingbauer et al., Proposal to the SPSC CERN, SPSC 88–25, SPSC/P 237.
5. GD type low resistance connectors from Shin—Etsu Polymer America, Inc., 34135 7-th Street, Union City, CA 94587.
6. Preamplifiers and shapers were developed at BNL and produced by ASTER TECHNOLOGY Inc., P.O. Box 729, Ramsenburg, NY 11960.
7. ADCs were produced by Dr. B. Struck, 2000 Tangstedt/Hamburg, Germany.
8. P. Rehak et al., Nucl. Instr. and Meth. A288, 168 (1990).
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