The initial stages of the oxidation of Si(100)2 x 1 studied by STM

Ultramicroscopy

Volumn 42-44, Issue PART 1, 1992, Pages 946-951

  Udagawa, M ^a   Umetani, Y ^b   Tanaka, H ^a   Itoh, M ^a   Uchiyama, T ^a   Watanabe, Y ^a   Yokotsuka, T ^a   Sumita, I ^a  

^a Matsushita Research Institute Tokyo Inc   (Japan)

^b Matsushita Technoresearch Inc   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; MICROSCOPIC EXAMINATION; OXIDATION; SURFACES;

HALF DIMERS; OXIDIZED TYPE C DEFECTS; SCANNING TUNNELING MICROSCOPY;

SEMICONDUCTING SILICON;

CONFERENCE PAPER; MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

EID: 0026899685     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/0304-3991(92)90383-U     Document Type: Article

References (30)

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3. Energetics in the initial stage of oxidation of silicon
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5. Real-time observation of oxygen and hydrogen adsorption on silicon surfaces by scanning tunneling microscopy
6. J. Vac. Sci. Technol. B
7. Atom-resolved surface chemistry: The early steps of Si(111)-7×7 oxidation
8. Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopy
9. New versatile room-temperature field ion scanning tunneling microscopy