STM studies of Si(100)-2×1 oxidation: defect chemistry and Si ejection

Ultramicroscopy

Volumn 42-44, Issue PART 1, 1992, Pages 838-844

  Avouris, Ph ^a   Cahill, D ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMISTRY; DEFECTS; MICROSCOPIC EXAMINATION; OXIDATION; SPECTROSCOPIC ANALYSIS; SURFACES;

BUMPS AND ISLANDS; DENSITY OF STATES; DIMER REACTIVITY; SCANNING TUNNELING MICROSCOPY; SCANNING TUNNELING SPECTROSCOPY; SILICON DIMERS;

SEMICONDUCTING SILICON;

CONFERENCE PAPER; MICROSCOPY; SCANNING TUNNELING MICROSCOPY;

EID: 0026899684     PISSN: 03043991     EISSN: None     Source Type: Journal    
DOI: 10.1016/0304-3991(92)90366-R     Document Type: Article

References (26)

1. Surface Properties of Electronic Materials
2. Oxidation of Si(111)-(7×7) as studied by scanning tunneling microscopy
3. Real-time observation of oxygen and hydrogen adsorption on silicon surfaces by scanning tunneling microscopy
4. Atom-resolved surface chemistry: The early steps of Si(111)-7×7 oxidation
5. Electronic structure of the DAS model for the Si(111)7 × 7 reconstructed surface by energy band calculations
6. Determination of the local electronic structure of atomic-sized defects on Si(001) by tunneling spectroscopy
7. A simplified scanning tunneling microscope for surface science studies
8. Self-consistent study of the electronic and structural properties of the clean Si(001)(2 × 1) surface