Modulated‐impurity‐concentration transferred‐electron devices exhibiting large harmonic frequency content

Microwave and Optical Technology Letters

Volumn 5, Issue 8, 1992, Pages 354-359

  Jones, Stephen H ^a   Tait, Gregory B ^b   Shur, Michael ^a  

^a UNIVERSITY OF VIRGINIA   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

harmonic generation; millimeter wave devices; modulated device doping profile; Transferred electron devices

Indexed keywords

HARMONIC GENERATION; SEMICONDUCTOR DIODES, GUNN - ANALYSIS; SEMICONDUCTOR MATERIALS - DOPING;

DRIFT DIFFUSION SIMULATIONS; MILLIMETER WAVE DEVICES; TRANSFERRED ELECTRON DEVICES (TED);

OSCILLISTORS;

EID: 0026896633     PISSN: 08952477     EISSN: 10982760     Source Type: Journal    
DOI: 10.1002/mop.4650050804     Document Type: Article

References (7)

1. Operating Modes of Millimetre Wave Transferred Electron Oscillators
2. High Efficiency and Output Power from Second and Third Harmonic Millimeter‐Wave InP‐TED Oscillators above 170 GHz
3. Efficient Transferred Electron Device Simulation Method for Microwave and Millimeter Wave CAD Applications
4. Determination of Transport Parameters for InP Device Simulation in ‘n'nn’ Structures
5. Large‐Signal Characterizations of Unipolar III‐V Semiconductor Diodes at Microwave and Millimeter‐Wave Frequencies
6. Simulation Study of Harmonic Oscillators
7. Theoretical Contribution to the Design of Millimeter‐Wave TEO's